Ceramic capacitors with upper operating temperatures far beyond 200° C are essential for
high‐temperature electronics used in deep oil drilling, aviation, automotive industry and so …

Relaxors are a family of polar-oxides with a high degree of chemical disorder and nanosized
domains. A characteristic feature of relaxors is their slim polarization–electric field hysteresis …

During recent years, silicon carbide (SiC) power electronics has gone from being a
promising future technology to being a potent alternative to state-of-the-art silicon (Si) …

Overcurrent protection of silicon carbide (SiC) metal–oxide–semiconductor field-effect
transistors (MOSFETs) remains a challenge due to lack of practical knowledge. This paper …

This paper presents a board-level integrated silicon carbide (SiC) mosfet power module for
high temperature and high power density application. Specifically, a silicon-on-insulator …

A high‐temperature dielectric,(1–x)(0.6 Bi 1/2 Na 1/2 TiO 3–0.4 Bi 1/2 K 1/2 TiO 3)–x K 0.5
Na 0.5 NbO 3, off the morphotropic phase boundary of the parent matrix 0.8 Bi 1/2 Na 1/2 …

Optimum heat transfer in modern micro-channel heat sinks (MCHSs) plays a considerable
role in ameliorating the efficiency and power of these devices. The response surface …

An ultra‐wide temperature stable ceramic system based on (1− x)[0.94 (0.75 Bi0. 5Na0.
5TiO3− 0.25 NaNbO3)− 0.06 BaTiO3]− xCaZrO3 (CZ100x) is developed for capacitor …

Silicon Carbide (SiC) power semiconductors have shown the capability of greatly
outperforming Si-based power devices. Faster switching and smaller on-state losses …

SiC MOSFET can operate at a junction temperature of 200-250° C due to its improved
material properties and thermal stability. However, successful realization of SiC MOSFET …