Radiation hardened millimeter-wave receiver implemented in 90-nm, SiGe HBT technology

EM Al Seragi, S Dash, K Muthuseenu… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
This article presents novel radiation hardening design techniques to substantially reduce the
single-event effects (SEEs) on high-frequency receivers subject to various radiations when …

A high LO-to-RF isolation 34–53 GHz cascode mixer for ALMA observatory applications

CN Chen, YH Lin, YC Chen… - 2018 IEEE/MTT-S …, 2018 - ieeexplore.ieee.org
This paper presents the implementation of a downconversion single-ended mixer fabricated
by 0.1-μm GaAs pHEMT process with wide IF bandwidth, high LO-to-RF isolation, and low …

Comparison of highly linear resistive mixers in depletion and enhancement mode GaAs and GaN pHEMTs at Ka band

MS Clements, AV Pham, JS Sacks… - 2018 IEEE/MTT-S …, 2018 - ieeexplore.ieee.org
In this paper, for the first time we develop and benchmark the performance of three down-
converting Field Effect Transistor (FE T) resistive mixers at millimeter wave (mm W) …

A W-band direct-conversion IQ mixer in 0.13 μm SiGe BiCMOS technology

W Liu, H Liu, R Wang, Y Li, X Cheng… - 2016 IEEE MTT-S …, 2016 - ieeexplore.ieee.org
This paper presents a W-band zero intermediate frequency (Zero-IF) fundamental down
conversion mixer in 0.13 pm SiGe BiCMOS technology. Single balanced Gilbert cell is …

A 7–42 GHz dual-mode reconfigurable mixer with an integrated active IF balun

TT Nguyen, K Fujii, AV Pham - 2017 IEEE MTT-S International …, 2017 - ieeexplore.ieee.org
This paper presents a novel, dual-mode, reconfigurable, fully integrated double-balanced
ring mixer. The change in DC bias of the mixer core leads to two operation modes: a passive …

[PDF][PDF] 一种用于76-81 GHz 汽车雷达的CMOS 毫米波下混频器

饶晟瑀, 石春琦, 张润曦 - 红外与毫米波学报, 2020 - researching.cn
设计了一款用于76~ 81 GHz 汽车雷达的CMOS 毫米波正交下混频器, 该混频器由前置放大,
有源正交混频两部分构成. 在前置放大器中, 采用基于变压器的跨导增强技术改善了增益 …

Fully Integrated THz Receivers in Silicon for Imaging and Spectroscopy

E Al Seragi - 2024 - keep.lib.asu.edu
In this dissertation, enhanced coherent detection of terahertz (THz) radiation is presented for
Silicon integrated circuits (ICs). In general THz receivers implemented in silicon …

Integrated Class C-VCO—Mixer for 2.45 GHz transmitter in 180nm CMOS technology

PN Shasidharan, H Ramiah… - 2017 IEEE Asia Pacific …, 2017 - ieeexplore.ieee.org
This paper presents on the Up-conversion mixer and Class-C CMOS LC VCO which
operates at 2.45 GHz designed using 180 nm CMOS RF Technology. Voltage Controlled …

A 76-81GHz High-linearity CMOS Receiver Front-end for Automotive Radar

Z Duan, D Pan, B Liao, Y Dai, F Lin - 2018 IEEE International …, 2018 - ieeexplore.ieee.org
a 76-81 GHz receiver (Rx) front-end is implemented in 65-nm COMS for automotive radar.
The front-end consists of a low noise amplifier (LNA), an interstage network with two-stage …

A Transformer-Based Up-Conversion Mixer With Wide IF Bandwidth for Multi-Beam 5G New Radio

R Liu, Z Ouyang, Y Yu, W Tian, Z Chen… - 2022 IEEE MTT-S …, 2022 - ieeexplore.ieee.org
This letter presents a wideband millimeter-wave (mm-Wave) up-conversion mixer with high
linearity for multibeam 5G new radio. It consists of a double-balanced switch stage designed …