HfO2-based ferroelectrics: From enhancing performance, material design, to applications
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …
storage, and low energy consumption to fulfill the rapid developments of big data, the …
Ferroelectric tunnel junctions: modulations on the potential barrier
Z Wen, D Wu - Advanced materials, 2020 - Wiley Online Library
Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …
potential applications in next‐generation memories, owing to attractive advantages such as …
A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity
at the nanoscale into next-generation memory and logic devices. This is because their …
at the nanoscale into next-generation memory and logic devices. This is because their …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Thin‐film ferroelectrics
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …
Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing
Doped‐HfO2 thin films with ferroelectricity have attracted great attention due to their
potential application in semiconductor industry as negative capacitance and resistance …
potential application in semiconductor industry as negative capacitance and resistance …
Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films,
there is tremendous interest in this material and ferroelectric oxides are once again in the …
there is tremendous interest in this material and ferroelectric oxides are once again in the …
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …
Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films
Ferroelectric hafnia-based thin films have attracted intense attention due to their
compatibility with complementary metal-oxide-semiconductor technology. However, the …
compatibility with complementary metal-oxide-semiconductor technology. However, the …
High polarization, endurance and retention in sub-5 nm Hf 0.5 Zr 0.5 O 2 films
Ferroelectric HfO2 is a promising material for new memory devices, but significant
improvement of its important properties is necessary for practical application. However …
improvement of its important properties is necessary for practical application. However …