Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …

Atomic layer deposition (ALD) is an attractive method to deposit thin films for advanced
technological applications such as microelectronics and nanotechnology. One material …

The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …

Despite the rapid increase in the number of newly developed processes, area-selective
atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low …

Atomic layer deposition (ALD) palladium films were deposited at 200° C on various ALD
metal oxide surfaces using sequential exposures to Pd (II) hexafluoroacetylacetonate (Pd …

With devices being scaled down to the nanometer regime, the need for atomic thickness
control with high conformality is increasing. Atomic layer deposition (ALD) is a key …

Deposition of thin films with desired compositions, conformality and bonding to substrates is
a key component in nanotechnology research. The growth of metal films by atomic layer …

Atomic layer deposition (ALD) is expected to play an important role in future device
fabrication due to various benefits, such as atomic level thickness control and excellent …

Atomic layer deposition (ALD) processes are reported for ruthenium (Ru) and ruthenium
oxide (RuO2) using a zero-oxidation state liquid precursor, η4-2, 3-dimethylbutadiene …