A brief overview of the rapid progress and proposed improvements in gallium nitride epitaxy and process for third-generation semiconductors with wide bandgap
AC Liu, YY Lai, HC Chen, AP Chiu, HC Kuo - Micromachines, 2023 - mdpi.com
In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices
This work provides an experimentally driven performance comparison of commercial
Gallium Nitride on Silicon (GaN-on-Si) power devices rated 600-650V at room and elevated …
Gallium Nitride on Silicon (GaN-on-Si) power devices rated 600-650V at room and elevated …