The mid-infrared (MIR) wavelength range of the electromagnetic spectrum offers a number
of applications of growing importance such as photonic sensors for environment, industry or …

A theoretical framework for studying signal and noise in multiple-stage interband infrared
photovoltaic devices is presented. The theory flows from a general picture of electrons …

Yellow/amber (570–600 nm) emitting In x Ga 1− x N/Al y Ga 1− y N/GaN multiple quantum
wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on …

We report on a comparison study of the electrical and optical properties of a set of device
structures with different numbers of cascade stages, type-II superlattice (T2SL) absorber …

We present an optical spectroscopy analysis of the molecular beam epitaxy-grown
InAs/GaSb quantum systems to study the higher-order optical transitions in InAs/GaSb …

We report on structural, electrical, and optical characterizations of midwave infrared
InAs/GaSb superlattice (SL) pin photodiodes. High-quality SL samples, with 1 μ m thick …

A midwave infrared pin photodiode based on a type II InAs/GaSb superlattice (SL) was
fabricated, and electrical measurements under dark conditions were performed as a function …

At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window
and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength …

The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a
two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can …

Optimization of various growth parameters for type-II 13 MLs InAs/7 MLs GaSb strained layer
superlattices (SLSs)(λcut-off∼ 8μm at 300K), grown by solid source molecular beam …