III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …

In this Perspective, we will introduce possible future developments on group III-nitride nano-
LEDs, which are based on current achievements in this rapidly arising research …

We propose, fabricate, and characterize the on-chip integration of suspended pn junction
InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same …

Black phosphorus (BP) has recently garnered significant attention due to its specific physical
properties. At present, high-quality few-layer and thin-film BP is obtained principally by …

This paper presents the design, fabrication, and experimental characterization of
monolithically integrated pn junction InGaN/GaN multiple quantum well diodes (MQWDs) …

We propose, fabricate, and demonstrate integrated p–n junction InGaN/GaN multiple-
quantum-well devices with diverse functionalities on a GaN-on-silicon platform. Suspended …

The experimental results of the recent years on the synthesis of semipolar wide-band III–N-
layers on a nanostructured silicon substrate are summarized. The idea of synthesis involves …

Here, we propose, fabricate and characterize suspended photonic integration of InGaN
multiple-quantum-well light-emitting diode (MQW-LED), waveguide and InGaN MQW …

We propose, fabricate and characterize photonic integration of a InGaN/GaN multiple-
quantum-well light-emitting diode (MQW-LED), waveguide, ring resonator and InGaN/GaN …

Abstract Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies
is a promising candidate for room-temperature quantum photon sources for quantum …