III-Nitride micro-LEDs are promising building blocks for the next generation of high
performance microdisplays. To reach a high pixel density, it is desired to achieve micro …

Nonequilibrium carrier dynamics has been investigated in ELO and HVPE grown GaN
layers in a wide temperature and excitation range by using the time‐resolved picosecond …

The metrological capability of the picosecond four-wave mixing (FWM) technique for
evaluation of the photoelectrical properties of GaN heterostructures grown on sapphire …

Optical monitoring of nonequilibrium carrier dynamics was performed in freestanding GaN.
Four-wave mixing kinetics directly provided carrier lifetime of 5.4 ns in the layer, while …

We applied a time-resolved transient grating technique for investigation of nonequilibrium
carrier dynamics in GaAs 1− x Bi x alloys with x= 0.025–0.063⁠. The observed decrease in …

A holographic beam splitter has been integrated into a picosecond four-wave mixing (FWM)
scheme. This modification significantly simplified the procedure of dynamic grating …

Room-temperature luminescence properties of a dense electron-hole plasma were studied
in a set of GaN epilayers with thickness varying from 2 to 25 µm. The stimulated emission …

Time-resolved optical techniques of photoluminescence (PL), light-induced transient grating
(LITG), and differential transmission spectroscopy were used to investigate carrier dynamics …

Localization of charge carriers is of crucial importance in InGaN light emitting devices since
it governs carrier transport and ensures high radiative efficiency. In this work, we observe the …

We report on carrier dynamics in the green InGaN/GaN light emitting diodes grown by metal
organic chemical vapor deposition. Two LEDs with the same structures grown on pattern …