Gate current in metal–oxide–semiconductor (MOS) devices, caused by carriers tunneling
through a classically forbidden energy barrier, is studied in this paper. The physical …

Ultrathin silicon dioxide (SiO 2) layers with excellent electrical characteristics can be formed
using the nitric acid oxidation of Si (NAOS) method, ie, by immersion of Si in nitric acid (HNO …

Electron transport in ultrathin (tox 40 Å Al/SiO2/n Si structures is dominated by direct
tunneling of electrons across the SiO2 barrier. By analyzing the tunneling currents as a …

In the semiconductor industry, increasing density requirements continue to motivate the
production of microelectronic devices that function reproducibly at ever-smaller dimensions …

The integration of porous metal-organic frameworks onto the surface of materials, for use as
functional devices, is currently emerging as a promising approach for gas sensing and …

The electrical and dielectric properties of Al/SiO2/p-Si (MOS) structures were studied in the
frequency range 10kHz–10MHz and in the temperature range 295–400K. The interfacial …

The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs)
were studied in the temperature range of 80–400K. The investigation of various SDs …

Different from conventional metal–Si compounds–n-Si structures, the thin film of TiW alloy
was deposited on Pd2Si–n-Si to form a diffusion barrier between aluminum (Al) and Pd2Si …

The current–voltage (I–V) characteristics of metal–insulator–semiconductor Al/SiO2/p-Si
(MIS) Schottky diodes were measured at room temperature (300K). In addition, capacitance …

Printed electronics are considered for wireless electronic tags and sensors within the future
Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of …