The fundamental surface science of wurtzite gallium nitride

VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …

Electronic biosensors based on III-nitride semiconductors

R Kirste, N Rohrbaugh, I Bryan, Z Bryan… - Annual Review of …, 2015 - annualreviews.org
We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based
electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors …

Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides

SA Jewett, MS Makowski, B Andrews, MJ Manfra… - Acta biomaterialia, 2012 - Elsevier
The toxicity of semiconductor materials can significantly hinder their use for in vitro and in
vivo applications. Gallium nitride (GaN) is a material with remarkable properties, including …

Gallium nitride formation in liquid metal sonication

S Cai, M Mayyas, MG Saborio… - Journal of Materials …, 2020 - pubs.rsc.org
With growing research interest in liquid metals, such as Ga and Ga-based alloys,
understanding their behaviours at reduced dimensions is becoming of more fundamental …

[PDF][PDF] Liquid Metal Switches for Environmentally Responsive Electronics.

RA Bilodeau, DY Zemlyanov… - Advanced Materials …, 2017 - eng.yale.edu
DOI: 10.1002/admi. 201600913 providing a second system for non-mechanical liquid metal
manipulation. Zhang et al. fed aluminum chips to a galinstan droplet as fuel for self …

Group III nitride nanomaterials for biosensing

X Li, X Liu - Nanoscale, 2017 - pubs.rsc.org
Biosensing has found wide applications in biological and medical research, and in clinical
diagnosis, environmental monitoring and other analytical tasks. Recognized as novel and …

High performance, self-powered and thermally stable 200–750 nm spectral responsive gallium nitride (GaN) based broadband photodetectors

NKR Nallabala, S Godavarthi, VK Kummara… - Solar Energy Materials …, 2021 - Elsevier
We have developed and first reported Au/Ni/Pr 2 O 3/GaN broadband photodetector device
with photoresponsivity from 205 nm to 750 nm under self-powered mode. Using the Tauc's …

Effects of surface properties of GaN semiconductors on cell behavior

X Du, Z Guo, Y Meng, L Zhao, X Li, R Feng, W Zhao… - Heliyon, 2023 - cell.com
In recent years, semiconductors have aroused great interest in connecting, observing and
influencing the behavior of biological elements, and it is possible to use semiconductor-cell …

Aqueous stability of Ga-and N-polar gallium nitride

CM Foster, R Collazo, Z Sitar, A Ivanisevic - Langmuir, 2013 - ACS Publications
The stability of III-nitride semiconductors in various solutions becomes important as
researchers begin to integrate them into sensing platforms.. This study quantitatively …

Facile fabrication of 3D honeycomb-like porous GaN photoanode for reliable and sensitive photoelectrochemical detection of glucose

X Zhai, Y Zhang, Y Zhang, M Zhang, J Tang - Journal of Alloys and …, 2023 - Elsevier
A novel photoelectrochemical glucose sensor was constructed based on three-dimensional
(3D) porous GaN photoanode fabricated via wet etching of as-grown GaN epitaxial wafer …