III-nitride semiconductors for intersubband optoelectronics: a review
III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …
A critical review on the junction temperature measurement of light emitting diodes
In the new age of illumination, light emitting diodes (LEDs) have been proven to be the most
efficient alternative to conventional light sources. Yet, in comparison to other lighting …
efficient alternative to conventional light sources. Yet, in comparison to other lighting …
Supercontinua from integrated gallium nitride waveguides
Supercontinua are broadband spectra that are essential to optical spectroscopy, sensing,
imaging, and metrology. They are generated from ultrashort laser pulses through nonlinear …
imaging, and metrology. They are generated from ultrashort laser pulses through nonlinear …
Photophysics of β-Ga2O3: Phonon polaritons, exciton polaritons, free-carrier absorption, and band-edge absorption
L Cheng, Y Wu, W Zhong, D Chen, H Qi… - Journal of Applied …, 2022 - pubs.aip.org
Monoclinic gallium oxide (β-Ga 2 O 3) has attracted much attention from the fields of
optoelectronic and electronic devices owing to the properties of wide bandgap, great …
optoelectronic and electronic devices owing to the properties of wide bandgap, great …
Perspectives on future directions in III-N semiconductor research
The family of III-V nitride semiconductors has garnered significant research attention over
the last 20–25 years, and these efforts have led to many highly successful technologies …
the last 20–25 years, and these efforts have led to many highly successful technologies …
Development of periodically oriented gallium nitride for non-linear optics
Development of periodically oriented gallium nitride for non-linear optics [Invited] clickable
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Intersubband transitions in nonpolar GaN/Al (Ga) N heterostructures in the short-and mid-wavelength infrared regions
This paper assesses nonpolar m-and a-plane GaN/Al (Ga) N multi-quantum-wells grown on
bulk GaN for intersubband optoelectronics in the short-and mid-wavelength infrared ranges …
bulk GaN for intersubband optoelectronics in the short-and mid-wavelength infrared ranges …
Improvement of the critical temperature of NbTiN films on III-nitride substrates
In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as
substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive …
substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive …
Broadband measurements of the refractive indices of bulk gallium nitride
SR Bowman, CG Brown, M Brindza… - Optical Materials …, 2014 - opg.optica.org
New measurements of the index of refraction for free-standing samples of gallium nitride are
reported. A simple dispersive prism technique is used to obtain the birefringent indices from …
reported. A simple dispersive prism technique is used to obtain the birefringent indices from …
Optical dispersion and phase matching in gallium nitride and aluminum nitride
SR Bowman, CG Brown, B Taczak - Optical Materials Express, 2018 - opg.optica.org
Precise measurements of the index of refraction for oriented single crystal samples of
gallium nitride and aluminum nitride are reported. Dispersion and birefringence were …
gallium nitride and aluminum nitride are reported. Dispersion and birefringence were …