The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …

When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …

Local variations in the charge distribution at semiconductor interfaces can lead to energy
level band bending in the structure's band diagram. Measuring this band bending is …

Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …

Titanium carbide (TiC) thin films were prepared by non-reactive simultaneous double
magnetron sputtering. After deposition, all samples were annealed at different temperatures …

N type metal gate TiAlC film was grown by thermal atomic layer deposition (ALD) technique
using titanium tetrachloride (TiCl 4) and triethylaluminum (TEA) as precursors for the first …

This book is the third volume in my Ultra-High Temperature Materials (UHTM) series, which
is devoted to the materials having melting (sublimation or decomposition) points around or …

TiAlC metal gate for the metal-oxide-semiconductor field-effect-transistor (MOSFET) is grown
by the atomic layer deposition method using TiCl 4 and Al (CH 3) 3 (TMA) as precursors. It is …

We have investigated the effects of metal gate process temperature on the effective work
function (W eff) of MOS devices with all ALD HfO 2/TiN gate stack and its correlation with …

The role of TiN barrier layer on electrical performance of metal oxide semiconductor (MOS)
with Si/SiO 2/HfO 2/ALD-TiN/ALD-TiAlC structure is investigated. It is found that the effective …