Computing-in-memory architecture using energy-efficient multilevel voltage-controlled spin-orbit torque device
S Shreya, A Jain, BK Kaushik - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
Conventional von Neumann architecture suffers from data trafficking and power hungriness
between memory and processing units. Recent architectures escalating to overcome these …
between memory and processing units. Recent architectures escalating to overcome these …
Modeling of voltage-controlled spin–orbit torque MRAM for multilevel switching application
S Shreya, BK Kaushik - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
Magnetic tunnel junction (MTJ) has emerged as a viable candidate for next-generation
memory and logic applications. Manipulation of the magnetic and electric field can control …
memory and logic applications. Manipulation of the magnetic and electric field can control …
SOT and STT based four-Bit parallel MRAM cell for high-density applications
Spintronics based magnetic random-access memory (MRAM) offers nonvolatility, good
scalability, high access speed, and low-power benefits over conventional complementary …
scalability, high access speed, and low-power benefits over conventional complementary …
Differential spin Hall effect-based nonvolatile static random access memory for energy-efficient and fast data restoration application
S Shreya, BK Kaushik - IEEE Transactions on Magnetics, 2019 - ieeexplore.ieee.org
Spintronics, being a burgeoning area of research, aims to incorporate magnetic tunnel
junction (MTJ), as a basic storage building block, to various electronic applications. In …
junction (MTJ), as a basic storage building block, to various electronic applications. In …
Compact modeling of differential spin-orbit torque based MRAM
S Shreya, BK Kaushik - 2018 4th IEEE International …, 2018 - ieeexplore.ieee.org
Magnetic tunnel junction (MTJ) is the basic storage component of magnetic random access
memory (MRAM). In recent years, many structures such as in-plane MTJ, perpendicular …
memory (MRAM). In recent years, many structures such as in-plane MTJ, perpendicular …
Low-Power Pattern Recognition System Using Spintronics Compute-in-memory Architecture
Pattern recognition plays an important role in image recognition, classification, and
information processing. In this work, energy energy-efficient spintronics-based pattern …
information processing. In this work, energy energy-efficient spintronics-based pattern …
Low restoration-energy differential spin Hall effect MRAM for high-speed nonvolatile SRAM application
S Shreya, BK Kaushik - 20th International Symposium on …, 2019 - ieeexplore.ieee.org
A differential spin Hall effect (DSHE) based nonvolatile static random access memory,
named as DSNVM, is proposed in this paper. DSNVM consist of a conventional 6T SRAM …
named as DSNVM, is proposed in this paper. DSNVM consist of a conventional 6T SRAM …
AIMCU-MESO: An In-Memory Computing Unit Constructed by MESO Device
J Zeng, N Xu, Y Chen, C Huang, Z Li… - ACM Transactions on …, 2022 - dl.acm.org
Traditional CMOS-based von-Neumann computer architecture faces the issue of memory
wall that the limitation of bus-bandwidth and the speed mismatch between processor and …
wall that the limitation of bus-bandwidth and the speed mismatch between processor and …