In the first part of this paper, we review the developments which led to the present state-of-
the-art in the surface passivation of today's industrially predominant dopant-diffused …

The reduction in electronic recombination losses by the passivation of silicon surfaces is a
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …

An accurate quantitative description of the Auger recombination rate in silicon as a function
of the dopant density and the carrier injection level is important to understand the physics of …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …

The developments of high performance InGaN based micro-light-emitting diodes (μLEDs)
are discussed. We first review the early demonstrations of μLEDs and the state-of-the-art …

Even though the passivated emitter and rear cell (PERC) concept was introduced as a
laboratory-type solar cell in 1989, it took 25 years to transfer this concept into industrial mass …

Transition metal chalcogenides (TMCs) are a large family of 2D materials with different
properties, and are promising candidates for a wide range of applications such as …

Atomic-layer deposition (ALD) is a deposition technique capable of producing very thin
conformal films with control of the thickness and composition of the films at the atomic …

Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing
high quality, uniform and conformal thin films at relatively low temperatures. These …