Mechanical activation in mechanical removal of GaN using diamond tip and
mechanochemical removal using Al 2 O 3 tip are described by the Archard equation and …

Sapphire is a typical anisotropic material due to its unique crystal structure. The study on the
influence of anisotropy on the deformation mechanism has significance in guiding the …

Molecular dynamics simulations are carried out to investigate the nano abrasive machining
of monocrystalline gallium nitride (GaN). Effects of the cutting velocity, depth of cut (DOC) …

Nano-grinding is an essential step in ultra-precision machining for brittle material
semiconductor workpieces in order to improve the surface quality and preserve strength …

Single crystal gallium nitride (GaN) substrates are highly demanded for fabricating
advanced optoelectronic devices. It is thus essential to develop high efficiency machining …

Surface nanotribological properties and subsurface damage of flat and textured gallium
nitride (GaN) substrates during both linear and circular nanoscratching processes are …

Gallium nitride (GaN) is a hard and brittle single crystal and shaping it into thin substrates for
semiconductor applications is challenging. The quality of the machined surface can vary …

Monocrystalline AlN is a hard-brittle material. Thus, much focus has been on finding ways to
treat it efficiently while minimizing damage. This work uses the molecular dynamics …

The scratching-induced material removal behavior and mechanism of single-crystal AlN
using single diamond abrasive were studied at atomic level through molecular dynamics …

Reducing the friction and wear of nanodevices are the key to improve the performance of
micro/nanoelectromechanical systems (M/NMES). In this paper, a gallium nitride (GaN) …