Plastic strain relaxation of SiGe layers of different crystal orientations is analytically analyzed
and compared with experimental results. First, strain relaxation induced by ion implantation …

In this letter we present a method to increase the efficiency of SiGe layer relaxation by He+
ion implantation and annealing. Preferential nucleation of He platelets along a δ-impurity …

Self‐assembling of nanometer size voids in strained Sn precipitates after hot He+ ion
implantation is investigated by transmission electron microscopy (TEM). It is deduced from …

During the past two decades, the decrease in intrinsic delay of MOSFETs has been driven
by the scaling of the device dimensions. The performance improvement has relied mostly in …

We report on self-assembling of spherically shaped voids in nanometer size strained Sn
precipitates after irradiation with He+ ions in different conditions. It is found that high …