Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique
nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently …

The work presents the results of comprehensive studies of the electrical resistivity and
optical transmission coefficient temperature dynamics, phase transition heats, the phase …

Thanks to their unique optical properties Ge–Sb–S–Se–Te amorphous chalcogenide
materials and compounds offer tremendous opportunities of applications, in particular in …

Abstract Lanthanum germanide (La6Ge) thin films are successfully fabricated using the
thermal evaporation technique under a vacuum pressure of 10− 5 mbar. The resulting films …

Crystalline selenium-based photodiodes possess a photoresponse covering the range from
300 to 700 nm, low dark current, and high power conversion efficiency, making them …

This work presents the possibility of As-S-Se chalcogenide glass thin film preparation from a
solution of commercially available As 40 S 60 glass by modification of the solution …

The kinetics of photoinduced changes, namely, photobleaching and photodarkening in
sputtered ternary Ge_29Sb_8Se_63 thin films, was studied. The study of time evolution of …

This work presents the prospect of As–S–Se and As–Se thin film preparation from a modified
solution of As50Se50 chalcogenide glass in ethylenediamine. The source solution was …

Radio-frequency magnetron co-sputtering technique with GeTe and Sb 2 Te 3 targets has
been used for the deposition of Ge-Sb-Te amorphous thin films. Fabricated layers cover …

Utilization of the N, C, N‐chelating ligand L (L={2, 6‐(Me2NCH2) 2C6H3}−) in the chemistry
of 13 group elements provided either N→ In coordinated monomeric chalcogenides LIn (μ …