We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

Wide bandgap GaN has long been sought for its applications to blue and UV emitters and
high temperature/high power electronic devices. Recent introduction of commercial blue and …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Wide bandgap nitride semiconductors have recently attracted a great level of attention
owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters …

We review recent progress in the group-III nitride and related materials, and electronic and
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …

We present a comprehensive study of the free-exciton and exciton-polariton
photoluminescence in wurtzite GaN. Using polarization-dependent measurements we were …

The electronic properties of the zinc-blende and wurtzite group-III nitride compound
semiconductors AlN, GaN, and InN are studied within the empirical pseudopotential …

Nitride semiconductors are ubiquitous in optoelectronic devices such as LEDs and Blu-Ray
optical disks. A major limitation for further adoption of GaN in power electronics is its low …

We present the results of an experimental study on the binding energy for intrinsic free
excitons in wurtzite GaN. High-quality single-crystal GaN films grown by metalorganic …