Semiconductor device with curved conductive lines and method of forming the same
H01L23/538—Arrangements for conducting electric current within the device in operation
from one component to another, ie interconnections, eg wires, lead frames the …
from one component to another, ie interconnections, eg wires, lead frames the …
Stacking via structures for stress reduction
A method includes forming a first dielectric layer, forming a first redistribution line comprising
a first via extending into the first dielectric layer, and a first trace over the first dielectric layer …
a first via extending into the first dielectric layer, and a first trace over the first dielectric layer …
Packaged electronic system formed by electrically connected and galvanically isolated dice
D Paci, S Adorno, M Del Sarto, F Cerini… - US Patent App. 17 …, 2022 - Google Patents
(57) ABSTRACT A packaged electronic system having a support formed by an insulating
organic substrate housing a buried conductive region that is floating. A first die is fixed to the …
organic substrate housing a buried conductive region that is floating. A first die is fixed to the …
Semiconductor device with curved conductive lines and method of forming the same
An embodiment is package structure including a first integrated circuit die, a redistribution
structure bonded to the first integrated circuit die, the redistribution structure including a first …
structure bonded to the first integrated circuit die, the redistribution structure including a first …
Package structure and method
A package structure and a method of forming the same are provided. The package structure
includes an integrated circuit die and a redistribution structure bonded to the integrated …
includes an integrated circuit die and a redistribution structure bonded to the integrated …
Eccentric via structures for stress reduction
A method includes forming a first dielectric layer, forming a first redistribution line including a
first via extending into the first dielectric layer, and a first trace over the first dielectric layer …
first via extending into the first dielectric layer, and a first trace over the first dielectric layer …