Defect-stabilized substoichiometric polymorphs of hafnium oxide with semiconducting properties
Hafnium oxide plays an important role as a dielectric material in various thin-film electronic
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …
Crystal and electronic structure of oxygen vacancy stabilized rhombohedral hafnium oxide
Hafnium oxide is an outstanding candidate for next-generation nonvolatile memory solutions
such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access …
such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access …
Ferroelectric phase stabilization of HfO2 by nitrogen doping
L Xu, T Nishimura, S Shibayama, T Yajima… - Applied Physics …, 2016 - iopscience.iop.org
We report that nitrogen (N) doping can drive the ferroelectricity of HfO 2. It was found that N
doping can cause the transition from a monoclinic phase to a highly symmetric phase. The …
doping can cause the transition from a monoclinic phase to a highly symmetric phase. The …
Origin of the energetic ions at the substrate generated during high power pulsed magnetron sputtering of titanium
C Maszl, W Breilmann, J Benedikt… - Journal of Physics D …, 2014 - iopscience.iop.org
High power impulse magnetron sputtering (HiPIMS) plasmas generate energetic metal ions
at the substrate as a major difference to conventional direct current magnetron sputtering …
at the substrate as a major difference to conventional direct current magnetron sputtering …
Hysteresis-free deposition of niobium oxide films by HiPIMS using different pulse management strategies
We systematically investigate the reactive behaviour of two types of high-power pulsed
magnetron discharges above a Nb target using either square voltage pulses (denoted as …
magnetron discharges above a Nb target using either square voltage pulses (denoted as …
Benefits of the controlled reactive high-power impulse magnetron sputtering of stoichiometric ZrO2 films
J Vlček, J Rezek, J Houška, T Kozák, J Kohout - Vacuum, 2015 - Elsevier
High-power impulse magnetron sputtering with a pulsed reactive gas (oxygen) flow control
was used for high-rate reactive depositions of densified, highly optically transparent …
was used for high-rate reactive depositions of densified, highly optically transparent …
Oxygen vacancy stabilized zirconia (OVSZ); a joint experimental and theoretical study
Understanding the phase formation in zirconia (ZrO 2) has triggered a great debate over the
last couple of decades, with several mechanisms proposed so far. In the present letter, we …
last couple of decades, with several mechanisms proposed so far. In the present letter, we …
High-rate reactive high-power impulse magnetron sputtering of hard and optically transparent HfO2 films
J Vlček, A Belosludtsev, J Rezek, J Houška… - Surface and Coatings …, 2016 - Elsevier
High-power impulse magnetron sputtering (HiPIMS) with a pulsed reactive gas (oxygen)
flow control was used for high-rate reactive depositions of densified, highly optically …
flow control was used for high-rate reactive depositions of densified, highly optically …
Low-temperature synthesis of tetragonal phase of hafnium oxide using polymer-blended nanofiber precursor
Abstract Hafnium oxide (HfO 2), which is known as hafnia, is considered one of the best
materials for various future applications such as neuromorphic computing systems and …
materials for various future applications such as neuromorphic computing systems and …
Reactive HiPIMS deposition of SiO2/Ta2O5 optical interference filters
In this contribution, based on the detailed understanding of the processes at the target
during reactive high power impulse magnetron sputtering (HiPIMS), we demonstrate the …
during reactive high power impulse magnetron sputtering (HiPIMS), we demonstrate the …