New-generation ferroelectric AlScN materials
Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …
polarization states by external electric field in nonvolatile manner. However, complementary …
2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects
C Leblanc, S Song, D Jariwala - Current Opinion in Solid State and …, 2024 - Elsevier
Ferroelectric and two-dimensional (2D) materials are both heavily investigated classes of
electronic materials. This is unsurprising since they both have superlative fundamental …
electronic materials. This is unsurprising since they both have superlative fundamental …
PZT-Enabled MoS2 Floating Gate Transistors: Overcoming Boltzmann Tyranny and Achieving Ultralow Energy Consumption for High-Accuracy Neuromorphic …
J Chen, YQ Zhu, XC Zhao, ZH Wang, K Zhang… - Nano Letters, 2023 - ACS Publications
Low-power electronic devices play a pivotal role in the burgeoning artificial intelligence era.
The study of such devices encompasses low-subthreshold swing (SS) transistors and …
The study of such devices encompasses low-subthreshold swing (SS) transistors and …
Tuning Polarity in WSe2/AlScN FeFETs via Contact Engineering
Recent advancements in ferroelectric field-effect transistors (FeFETs) using two-dimensional
(2D) semiconductor channels and ferroelectric Al0. 68Sc0. 32N (AlScN) allow high …
(2D) semiconductor channels and ferroelectric Al0. 68Sc0. 32N (AlScN) allow high …
Unveiling the Pockels coefficient of ferroelectric nitride ScAlN
Nitride ferroelectrics have recently emerged as promising alternatives to oxide ferroelectrics
due to their compatibility with mainstream semiconductor processing. ScAlN, in particular …
due to their compatibility with mainstream semiconductor processing. ScAlN, in particular …
Layer-Controlled Growth of Single-Crystalline 2D Bi2O2Se Film Driven by Interfacial Reconstruction
M Kang, HB Jeong, Y Shim, HJ Chai, YS Kim, M Choi… - ACS …, 2023 - ACS Publications
As semiconductor scaling continues to reach sub-nanometer levels, two-dimensional (2D)
semiconductors are emerging as a promising candidate for the post-silicon material. Among …
semiconductors are emerging as a promising candidate for the post-silicon material. Among …
Two-dimensional fully ferroelectric-gated hybrid computing-in-memory hardware for high-precision and energy-efficient dynamic tracking
Computing in memory (CIM) breaks the conventional von Neumann bottleneck through in
situ processing. Monolithic integration of digital and analog CIM hardware, ensuring both …
situ processing. Monolithic integration of digital and analog CIM hardware, ensuring both …
Two-dimensional van der Waals ferroelectrics: A pathway to next-generation devices in memory and neuromorphic computing
The rapid increase in CPU processing speeds has significantly advanced artificial
intelligence, yet it has also exacerbated the disparity in CPU utilization and data throughput …
intelligence, yet it has also exacerbated the disparity in CPU utilization and data throughput …
A scalable ferroelectric non-volatile memory operating at 600° C
Non-volatile memory devices that can operate reliably at high temperature are required for
the development of extreme environment electronics. However, creating such devices …
the development of extreme environment electronics. However, creating such devices …
CMOS-compatible, AlScN-based integrated electro-optic phase shifter
Commercial production of integrated photonic devices is limited by scalability of desirable
material platforms. We explore a relatively new photonic material, AlScN, for its use in …
material platforms. We explore a relatively new photonic material, AlScN, for its use in …