Ferroelectricity in Simple Binary ZrO2 and HfO2

J Muller, TS Boscke, U Schroder, S Mueller… - Nano …, 2012 - ACS Publications
The transition metal oxides ZrO2 and HfO2 as well as their solid solution are widely
researched and, like most binary oxides, are expected to exhibit centrosymmetric crystal …

Ferroelectricity in yttrium-doped hafnium oxide

J Müller, U Schröder, TS Böscke, I Müller… - Journal of Applied …, 2011 - pubs.aip.org
Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide
thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO 1.5 in HfO 2 was …

Tailoring SnO2 Defect States and Structure: Reviewing Bottom-Up Approaches to Control Size, Morphology, Electronic and Electrochemical Properties for Application …

R Ponte, E Rauwel, P Rauwel - Materials, 2023 - mdpi.com
Tin oxide (SnO2) is a versatile n-type semiconductor with a wide bandgap of 3.6 eV that
varies as a function of its polymorph, ie, rutile, cubic or orthorhombic. In this review, we …

A novel approach to low-temperature synthesis of cubic HfO2 nanostructures and their cytotoxicity

N Kumar, BPA George, H Abrahamse, V Parashar… - Scientific reports, 2017 - nature.com
The development of a strategy to stabilise the cubic phase of HfO2 at lower temperatures is
necessary for the emergence of unique properties that are not realised in the …

Multifunctional Role of Rare Earth Doping in Optical Materials: Nonaqueous Sol–Gel Synthesis of Stabilized Cubic HfO2 Luminescent Nanoparticles

A Lauria, I Villa, M Fasoli, M Niederberger, A Vedda - Acs Nano, 2013 - ACS Publications
In this work a strategy for the control of structure and optical properties of inorganic
luminescent oxide-based nanoparticles is presented. The nonaqueous sol–gel route is …

High-k (k= 30) amorphous hafnium oxide films from high rate room temperature deposition

FM Li, BC Bayer, S Hofmann, JD Dutson… - Applied Physics …, 2011 - pubs.aip.org
Amorphous hafnium oxide (HfO x) is deposited by sputtering while achieving a very high k∼
30⁠. Structural characterization suggests that the high k is a consequence of a previously …

One step synthesis of pure cubic and monoclinic HfO2 nanoparticles: Correlating the structure to the electronic properties of the two polymorphs

P Rauwel, E Rauwel, C Persson, MF Sunding… - Journal of Applied …, 2012 - pubs.aip.org
Hafnium dioxide is a wide band-gap, high-κ material, and Hafnium based compounds have
already been integrated into micro-electronic devices. The pure cubic HfO 2 phase is …

Up-Conversion Emissions from HfO2: Er3+, Yb3+ Nanoparticles Synthesized by the Hydrothermal Method

MD Méndez-Castillo, M García-Hipólito… - ACS …, 2024 - ACS Publications
Up-conversion emission from HfO2 nanoparticles, as a host lattice, doped with Er3+ and
Yb3+ ions and codoped with alkaline cations Li+ and Na+ obtained. The HfO2 …

Chemical solution deposition of ferroelectric Sr: HfO2 film from inorganic salt precursors

A Wei, C Chen, L Tang, K Zhou, D Zhang - Journal of Alloys and …, 2018 - Elsevier
Strontium doped hafnium oxide (Sr: HfO 2) ferroelectric thin films with strontium
concentrations ranging from 0 to 20mol% were processed with inorganic hafnium source …

Importance of tailoring the thickness of SiO2 interlayer in the observation of ferroelectric characteristics in yttrium doped HfO2 films on silicon

N Sun, D Zhou, W Liu, Y Zhang, S Li, J Wang, F Ali - Vacuum, 2021 - Elsevier
When being integrated in the fabrication processes of conventional silicon devices, hafnium
oxide (HfO 2) based films are routinely grown directly on the bare Si, thus causing an …