Machine learning regression-based single-event transient modeling method for circuit-level simulation
C Xu, Y Liu, X Liao, J Cheng… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this article, a novel machine learning regression-based single-event transient (SET)
modeling method is proposed. The proposed method can obtain a reasonable and accurate …
modeling method is proposed. The proposed method can obtain a reasonable and accurate …
How to Consider SEEs When Designing a SiGe Low-Noise Amplifier-An Overview
The application of radiation-hardening by design (RHBD) to the low-noise amplifier (LNA) in
an RF communications receiver has promise for improving data fidelity in applications …
an RF communications receiver has promise for improving data fidelity in applications …
A physics-based single event transient pulse width model for CMOS VLSI circuits
The single-event transients in MOSFETs due to heavy ion strikes introduce soft errors in sub-
50 nm CMOS VLSI circuits. These transients are easily captured and propagated in high …
50 nm CMOS VLSI circuits. These transients are easily captured and propagated in high …
Prediction of SET on SRAM based on WOA-BP neural network
W Zhou, M Li, L Li, KH Yeh - Journal of Internet Technology, 2023 - jit.ndhu.edu.tw
The incidence of high-energy particles into the semiconductor device would induce single
event transients (SETs), which is a main threaten to MOS device. And the incidence …
event transients (SETs), which is a main threaten to MOS device. And the incidence …
Machine Learning-based model for Single Event Upset Current Prediction in 14nm FinFETs
This work presents a machine learning regression-based surrogate model of Single Event
Upset (SEU) transient current for circuit-level simulation. The phenomenal success of …
Upset (SEU) transient current for circuit-level simulation. The phenomenal success of …
[HTML][HTML] Machine Learning-Based Soft-Error-Rate Evaluation for Large-Scale Integrated Circuits
Transient pulses generated by high-energy particles can cause soft errors in circuits,
resulting in spacecraft malfunctions and posing serious threats to the normal operation of …
resulting in spacecraft malfunctions and posing serious threats to the normal operation of …
[HTML][HTML] A Method for Automatically Predicting the Radiation-Induced Vulnerability of Unit Integrated Circuits
R Dong, H Lu, C Yang, Y Zhang, R Yao, Y Wang… - Micromachines, 2024 - mdpi.com
With the rapid development of semiconductor technology, the reduction in device operating
voltage and threshold voltage has made integrated circuits more susceptible to the effects of …
voltage and threshold voltage has made integrated circuits more susceptible to the effects of …
[HTML][HTML] Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET
F Zhang, Y Wang, Y Liu, M Wu, Z Zhou - Electronics, 2023 - mdpi.com
As the manufacturing process level of semiconductor devices continues to improve, the
device size gradually decreases, and the devices are affected by the single event effect …
device size gradually decreases, and the devices are affected by the single event effect …
A physics-based analytical model for single-event transients in an InGaAs n-channel FinFET suitable for circuit simulations
Abstract InGaAs/Ge complementary FinFET technology has been considered as an
alternative channel material for CMOS technology, useful for next-generation digital VLSI …
alternative channel material for CMOS technology, useful for next-generation digital VLSI …
[HTML][HTML] An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor
Y Zhang, H Lu, C Liu, Y Zhang, R Yao, X Liu - Micromachines, 2023 - mdpi.com
In this paper, a single-event transient model based on the effective space charge for
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …