[HTML][HTML] The evolution of organosilicon precursors for low-k interlayer dielectric fabrication driven by integration challenges
N Hong, Y Zhang, Q Sun, W Fan, M Li, M Xie, W Fu - Materials, 2021 - mdpi.com
Since the application of silicon materials in electronic devices in the 1950s, microprocessors
are continuously getting smaller, faster, smarter, and larger in data storage capacity. One …
are continuously getting smaller, faster, smarter, and larger in data storage capacity. One …
Flexible films derived from PIM-1 with ultralow dielectric constants
B Liu, KG Haw, C Zhang, G Yu, J Li, P Zhang… - Microporous and …, 2020 - Elsevier
High hydrophobicity, non-polar structure and large pore volume are among the main criteria
demanded breakthrough when designing or selecting materials with ultralow dielectric …
demanded breakthrough when designing or selecting materials with ultralow dielectric …
Preparation and Characterization of Low Dielectric Constant Films Using Silicon Sources
ZW He, HX Lin, CY Li, AM Mahajan… - Materials Science …, 2020 - Trans Tech Publ
Effect of various silicon sources, such as TEOS, MTES mixed with TEOS and 1, 3, 5-tris
(triethoxymethyl) on SiO 2 films was investigated. The synthesized solutions were used as …
(triethoxymethyl) on SiO 2 films was investigated. The synthesized solutions were used as …