Hydrogen-related defects and oxygen vacancies in silica are analyzed using first-principles
density-functional calculations. Energetics, structures, charge-state levels, and hyperfine …

Leakage currents introduced in the low‐field, direct‐tunneling regime of thin oxides during
high‐field stress are related to defects produced by hot‐electron transport in the oxide layer …

Hydrogen-related defects in oxygen-deficient silica, representing the material of a thermal
gate oxide, are analyzed using first-principles calculations. Energetics and charge-state …

Hole injection into silicon dioxide films from the polycrystalline-silicon anode or from the
anode/oxide interface is demonstrated to unequivocally occur for any case where electrons …

Convergent lines of evidence are reviewed which show that near-interfacial oxide traps
(border traps) that exchange charge with the Si can strongly affect the performance …

The transport and reactions of hydrogen-related species play critical roles in determining the
ionizing radiation response and long-term reliability of Si-based metal-oxide-semiconductor …

This book covers a broad spectrum of the silicon-based materials and their device
applications. This book provides a broad coverage of the silicon-based materials including …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

We explore the energetics and migration of neutral hydrogen in SiO 2 using ab initio density-
functional calculations. From static minimizations (T= 0), we have calculated the formation …

A spin-dependent trap-assisted tunneling current has been detected in a thin 44.5 Å SiO2
film. An electron paramagnetic resonance signal, obtained from the tunnel current, provides …