Radiation resilient two-dimensional electronics
TF Schranghamer, A Pannone… - … Applied Materials & …, 2023 - ACS Publications
Limitations in cloud-based computing have prompted a paradigm shift toward all-in-one
“edge” devices capable of independent data sensing, computing, and storage. Advanced …
“edge” devices capable of independent data sensing, computing, and storage. Advanced …
Direct Characterization of Buried Interfaces in 2D/3D Heterostructures Enabled by GeO2 Release Layer
Inconsistent interface control in devices based on two-dimensional materials (2DMs) has
limited technological maturation. Astounding variability of 2D/three-dimensional (2D/3D) …
limited technological maturation. Astounding variability of 2D/three-dimensional (2D/3D) …
[HTML][HTML] Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS2 Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments
Gate dielectrics are essential components in nanoscale field-effect transistors (FETs), but
they often face significant instabilities when exposed to harsh environments, such as …
they often face significant instabilities when exposed to harsh environments, such as …
MEMS Pressure Sensor Based on Piezoresistive Effect of MoS2 Film
X Pang, Q Zhang, X Liang, Y Zhao - 2023 IEEE SENSORS, 2023 - ieeexplore.ieee.org
Molybdenum disulfide (MoS 2) has excellent electrical and mechanical properties and can
be used as sensors. 2D MoS 2 is commonly used in sensors and is poorly compatible with …
be used as sensors. 2D MoS 2 is commonly used in sensors and is poorly compatible with …
[PDF][PDF] OC10: In-situ Monitoring of Two-Dimensional Transistors under Low Energy Focused Ion Beam Irradiation
OC10: In-situ Monitoring of Two-Dimensional Transistors under Low Energy Focused Ion
Beam Irradiation Page 27 27 OC10: In-situ Monitoring of Two-Dimensional Transistors under …
Beam Irradiation Page 27 27 OC10: In-situ Monitoring of Two-Dimensional Transistors under …