Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon
Electron spins in silicon offer a competitive, scalable quantum‐computing platform with
excellent single‐qubit properties. However, the two‐qubit gate fidelities achieved so far have …
excellent single‐qubit properties. However, the two‐qubit gate fidelities achieved so far have …
Charge detection in an array of CMOS quantum dots
E Chanrion, DJ Niegemann, B Bertrand, C Spence… - Physical Review …, 2020 - APS
The recent development of arrays of quantum dots in semiconductor nanostructures
highlights the progress of quantum devices toward a large scale. However, how to realize …
highlights the progress of quantum devices toward a large scale. However, how to realize …
A silicon singlet–triplet qubit driven by spin-valley coupling
Spin–orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface,
provide a means to control electron spin qubits without the added complexity of on-chip …
provide a means to control electron spin qubits without the added complexity of on-chip …
Modeling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
The spin of an electron confined in semiconductor quantum dots is currently a promising
candidate for quantum bit (qubit) implementations. Taking advantage of the existing CMOS …
candidate for quantum bit (qubit) implementations. Taking advantage of the existing CMOS …
Quantum Transport Properties of Industrial
We investigate the structural and quantum transport properties of isotopically enriched Si
28/Si O 2 28 stacks deposited on 300-mm Si wafers in an industrial CMOS fab. Highly …
28/Si O 2 28 stacks deposited on 300-mm Si wafers in an industrial CMOS fab. Highly …
Interplay of charge noise and coupling to phonons in adiabatic electron transfer between quantum dots
JA Krzywda, Ł Cywiński - Physical Review B, 2021 - APS
Long-distance transfer of quantum information in architectures based on quantum dot spin
qubits will be necessary for their scalability. One way of achieving this goal is to simply move …
qubits will be necessary for their scalability. One way of achieving this goal is to simply move …
Probing Low-Frequency Charge Noise in Few-Electron CMOS Quantum Dots
C Spence, B Cardoso Paz, V Michal, E Chanrion… - Physical Review …, 2023 - APS
Charge noise is one of the main sources of environmental decoherence for spin qubits in
silicon, presenting a major obstacle in the path towards highly scalable and reproducible …
silicon, presenting a major obstacle in the path towards highly scalable and reproducible …
Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing
To improve mobility of fabricated silicon metal-oxide–semiconductor (MOS) quantum
devices, forming gas annealing is a common method used to mitigate the effects of disorder …
devices, forming gas annealing is a common method used to mitigate the effects of disorder …
Probing charge noise in few electron CMOS quantum dots
C Spence, B Cardoso-Paz, V Michal… - arXiv preprint arXiv …, 2022 - arxiv.org
Charge noise is one of the main sources of environmental decoherence for spin qubits in
silicon, presenting a major obstacle in the path towards highly scalable and reproducible …
silicon, presenting a major obstacle in the path towards highly scalable and reproducible …
Scalable on-chip multiplexing of silicon single and double quantum dots
Owing to the maturity of complementary metal oxide semiconductor (CMOS)
microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered …
microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered …