The present work reviews atomic-scale properties of point defects and dopant atoms
exposed on and in cleavage surfaces of III–V and II–VI semiconductors. In particular, we …

When collimated beams of low energy ions are used to bombard materials, the surface often
develops a periodic pattern or “ripple” structure. Different types of patterns are observed to …

Scanning tunneling microscopy (STM) studies of spontaneous halogen etching of Si (100)-
2× 1 and Si (111) in the range 700–1100 K are reviewed. Although the morphology depends …

Coulomb explosions on silicon surfaces are studied using large-scale molecular-dynamics
simulations. Processes under investigation begin by embedding a region consisting of 265 …

Abstract The nondeterministic Kuramoto-Sivashinsky (KS) equation is solved numerically in
2+ 1 dimensions. The simulations reveal the presence of early and late scaling regimes. The …

We study pattern formation processes in anisotropic system governed by the Kuramoto-
Sivashinsky equation with multiplicative noise as a generalization of the Bradley-Harper …

The present work reviews the progress in the determination and understanding of the atomic
structure of point defects and dopant atoms exposed in and below cleavage surfaces of III–V …

C hemical etching has been practiced since at least the late Middle Ages. In its early form, it
involved coating an object, such as a metal plate, with wax, carefully patterning the …

The time evolution of adatom and vacancy islands on an Ag (110) surface is studied by
using a variable-temperature ultrahigh vacuum scanning tunneling microscope. The islands …

We have examined the roughness evolution of the Si (111) surface at T= 610K by 500eV Ar
ion bombardment near normal incidence using scanning tunneling microscopy from …