In recent years, SRAM-based FPGAs (Field Programmable Gate Arrays) have been popular
in space applications because of their high speed and reconfigurability. The specific …

The dependence of 0.13 µm NMOS single event transient on linear energy transfer (LET) is
studied and integrated into a single event transient (SET) pulses fault injection model. A …

In this paper, the impact of punch-through stop (PTS) doping and fin angle on the total
ionizing dose (TID) response of 14nm bulk FinFETs are investigated by 3D TCAD …

PD-SO1 circuit designers oflen must explicitly account for the MOSFET body voltage.
Floating body effects can be undesirable, but avoiding them thmngh the use of body …

A high-precision voltage regulator with overcurrent protection and transient enhancement is
proposed in this paper. With self-power technique (SPT), the regulated output voltage is …

In this paper, the Ring Oscillators (ROs) with inverters, 8 (or 16) dividers, and 3-level buffers
are fabricated in a 22 nm Ultra-Thin Body and Buried oxide (UTBB) Fully Depleted Silicon …

In this article, the effect of proton irradiation on the DC characteristic of InP/InGaAs
heterojunction is studied with varying fluences and proton energies. The current-voltage (IV) …

This paper describes the total dose radiation performance of CMOS/SOI 4 Kb SRAMs
fabricated in a radiation hardened partially depleted SOI CMOS technology. The SRAM …

2D device simulation with an ideal condition is used to study the mechanism for single-event
upset (SEU) of SOI pMOS, which can be more significant in SRAM when gate length is …

A novel radiation experiment was performed using recent vintage 8080A microprocessors
from several manufacturers. Functional self tests were continuously monitored during …