Stacking fault related luminescence at acceptors in zinc oxide

M Schirra, R Schneider, A Reiser, GM Prinz… - Physical Review B …, 2008 - APS
Bulk ZnO samples, epitaxially grown ZnO layers, and ZnO nanostructures frequently exhibit
a characteristic emission band at 3.31-eV photon energy whose origin is controversially …

Imaging nonradiative point defects buried in quantum wells using cathodoluminescence

TFK Weatherley, W Liu, V Osokin, DTL Alexander… - Nano Letters, 2021 - ACS Publications
Crystallographic point defects (PDs) can dramatically decrease the efficiency of
optoelectronic semiconductor devices, many of which are based on quantum well (QW) …

Scanning cathodoluminescence microscopy

CM Parish, PE Russell - Advances in Imaging and Electron Physics, 2007 - Elsevier
Publisher Summary Cathodoluminescence (CL) is light emitted by a solid material because
of irradiation by an electron beam. When the spectral distribution of light is studied, CL …

What is the real value of diffusion length in GaN?

EB Yakimov - Journal of Alloys and Compounds, 2015 - Elsevier
The applicability of scanning electron microscopy methods for excess carrier diffusion length
measurements in GaN is discussed. The discussion is based on author's experiments and …

Carrier Diffusion in : A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations

J Lähnemann, VM Kaganer, KK Sabelfeld… - Physical Review …, 2022 - APS
We investigate the impact of threading dislocations with an edge component (a or a+ c type)
on carrier recombination and diffusion in Ga N (0001) layers close to the surface as well as …

Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN (0 0 0 1)

KK Sabelfeld, VM Kaganer, C Pfüller… - Journal of Physics D …, 2017 - iopscience.iop.org
We theoretically analyze the contrast observed at the outcrop of a threading dislocation at
the GaN (0 0 0 1) surface in cathodoluminescence and electron-beam induced current …

Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor …

Y Yao, Y Sugawara, D Yokoe, K Sato, Y Ishikawa… - …, 2020 - pubs.rsc.org
Correlations between the structural properties and nonradiative recombination (NRR)
behaviors of threading dislocations in freestanding hydride-vapor-phase-epitaxy (HVPE) …

Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

YN Picard, JD Caldwell, ME Twigg, CR Eddy… - Applied Physics …, 2007 - pubs.aip.org
Threading dislocations in metal-organic chemical-vapor grown GaN films were imaged
nondestructively by the electron channeling contrast imaging (ECCI) technique …

An extended defect as a sensor for free carrier diffusion in a semiconductor

TH Gfroerer, Y Zhang, MW Wanlass - Applied Physics Letters, 2013 - pubs.aip.org
We use confocal photoluminescence microscopy to study carrier diffusion near an isolated
extended defect (ED) in GaAs. We observe that the carrier diffusion length varies non …

Investigation of nickel‐63 radioisotope‐powered GaN betavoltaic nuclear battery

S Aydin, E Kam - International Journal of Energy Research, 2019 - Wiley Online Library
This work describes the theoretical and experimental investigation of an in‐house produced
63Ni radioisotope‐powered GaN‐based direct conversion (betavoltaic) nuclear battery. GaN …