TFK Weatherley, W Liu, V Osokin, DTL Alexander… - Nano Letters, 2021 - ACS Publications
Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) …
CM Parish, PE Russell - Advances in Imaging and Electron Physics, 2007 - Elsevier
Publisher Summary Cathodoluminescence (CL) is light emitted by a solid material because of irradiation by an electron beam. When the spectral distribution of light is studied, CL …
EB Yakimov - Journal of Alloys and Compounds, 2015 - Elsevier
The applicability of scanning electron microscopy methods for excess carrier diffusion length measurements in GaN is discussed. The discussion is based on author's experiments and …
We investigate the impact of threading dislocations with an edge component (a or a+ c type) on carrier recombination and diffusion in Ga N (0001) layers close to the surface as well as …
We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN (0 0 0 1) surface in cathodoluminescence and electron-beam induced current …
Correlations between the structural properties and nonradiative recombination (NRR) behaviors of threading dislocations in freestanding hydride-vapor-phase-epitaxy (HVPE) …
Threading dislocations in metal-organic chemical-vapor grown GaN films were imaged nondestructively by the electron channeling contrast imaging (ECCI) technique …
We use confocal photoluminescence microscopy to study carrier diffusion near an isolated extended defect (ED) in GaAs. We observe that the carrier diffusion length varies non …
S Aydin, E Kam - International Journal of Energy Research, 2019 - Wiley Online Library
This work describes the theoretical and experimental investigation of an in‐house produced 63Ni radioisotope‐powered GaN‐based direct conversion (betavoltaic) nuclear battery. GaN …