Fluorine cold plasmas produced by an electrical discharge in SF 6, CF 4, CHF 3 or C 4 F 8
gases, principally, have two main fields of application. The first and historical application is …

Plasma oxidation of the c-Si substrate through a very thin gate oxide layer can be observed
during HBr/O 2/Ar based plasma overetch steps of gate etch processes. This phenomenon …

A global model has been developed for low-pressure (3–20 mTorr), radio-frequency
(rf)(13.56 MHz) inductively coupled plasmas (ICPs), produced in SF 6/Ar mixtures. The …

Atomic-or nanometer-scale roughness on feature surfaces has become an important issue
to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases …

Atomic-or nanometer-scale surface roughening and rippling during Si etching in high-
density Cl 2 and Cl 2/O 2 plasmas have been investigated by developing a three …

Atomic-scale cellular model has been developed to simulate the feature profile evolution
during poly-Si gate etching in high-density Cl 2 and Cl 2∕ O 2 plasmas, with emphasis …

Feature profiles of Si etched in HBr-containing plasmas have been analyzed through a
comparison between experiments and simulations. The emphasis was placed on a …

Plasma–surface interactions in Cl-and Br-based plasmas have been studied for advanced
front-end-of-line (FEOL) etching processes in nanoscale ULSI device fabrication. A Monte …

The fabrication of interconnects in integrated circuits requires the use of porous low
dielectric constant materials that are unfortunately very sensitive to plasma processes. In this …

The authors have investigated the dry etch mechanisms of complex poly-Si∕ Ti N∕ Hf O 2
gate stacks and the issues that are correlated with the introduction of a thin metal layer in the …