Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films,
there is tremendous interest in this material and ferroelectric oxides are once again in the …

The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …

Ferroelectric HfO2 is a promising material for new memory devices, but significant
improvement of its important properties is necessary for practical application. However …

Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the
material and for prototyping emerging devices. Ferroelectric Hf0. 5Zr0. 5O2 (111) films were …

Ferroelectric hafnia-based thin films have attracted significant interest due to their
compatibility with complementary metal-oxide-semiconductor technology (CMOS) …

Doping ferroelectric Hf0. 5Zr0. 5O2 with La is a promising route to improve endurance.
However, the beneficial effect of La on the endurance of polycrystalline films may be …

Ultrathin Hf1–x Zr x O2 films have attracted tremendous interest since they show ferroelectric
behavior at the nanoscale, where other ferroelectrics fail to stabilize the polar state. Their …