Intrinsic coherent acoustic phonons in the indirect band gap semiconductors Si and GaP
We report on the intrinsic optical generation and detection of coherent acoustic phonons at
(001)-oriented bulk Si and GaP without metallic phonon transducer structures …
(001)-oriented bulk Si and GaP without metallic phonon transducer structures …
All-optical control of semiconductor nanostructure scattering/absorption via the photothermal effect
The recent evolution of semiconductor nanodevices, including nanoresonators and
metasurfaces, has provided active tunability of optical functionality by efficiently utilizing …
metasurfaces, has provided active tunability of optical functionality by efficiently utilizing …
Rationale behind subpicosecond optical response of transparent conductive oxides in epsilon-near-zero region
Developing materials with large optical nonlinearity as well as ultrafast optical response is
crucial for high-speed integrated photonic devices. Besides large optical nonlinearity at …
crucial for high-speed integrated photonic devices. Besides large optical nonlinearity at …
Insights into laser-materials interaction through modeling on atomic and macroscopic scales
MV Shugaev, M He, SA Lizunov, Y Levy… - Advances in the …, 2018 - Springer
Computer simulations and theoretical analysis of laser-materials interactions are playing an
increasingly important role in the advancement of modern laser technologies and …
increasingly important role in the advancement of modern laser technologies and …
Lifetime enhancement in the laser-induced periodic surface structures on Si (100) probed by ultrafast transient absorption spectroscopy
Laser-induced periodic surface structures are created by irradiating a Si (001) wafer with a
femtosecond pulse laser, and then ultrafast transient absorption spectroscopy is carried out …
femtosecond pulse laser, and then ultrafast transient absorption spectroscopy is carried out …
Broadband optical ultrafast reflectivity of Si, Ge and GaAs
Ultrafast optical reflectivity measurements of silicon, germanium, and gallium arsenide have
been carried out using an advanced set-up providing intense subpicosecond pulses (35 fs …
been carried out using an advanced set-up providing intense subpicosecond pulses (35 fs …
Imaging ultrafast evolution of subwavelength-sized topography using single-probe structured light microscopy
Imaging ultrafast processes in femtosecond (fs) laser–material interactions such as fs laser
ablation is very important to understand the physical mechanisms involved. To achieve this …
ablation is very important to understand the physical mechanisms involved. To achieve this …
Coherent optical and acoustic phonons generated at lattice-matched GaP/Si (0 0 1) heterointerfaces
Thin GaP films can be grown on an exact Si (0 0 1) substrate with nearly perfect lattice
match. We perform all-optical pump–probe measurements to investigate the ultrafast …
match. We perform all-optical pump–probe measurements to investigate the ultrafast …
Temperature dependence of emission intensity in femtosecond laser-induced Ge plasma
X Wang, A Chen, L Sui, Y Wang, D Zhang… - Journal of Analytical …, 2018 - pubs.rsc.org
Femtosecond laser-induced breakdown spectroscopy (LIBS) of Ge at different initial sample
temperatures is investigated. The spectral intensity of the Ge (I) 422.66 nm line is shown to …
temperatures is investigated. The spectral intensity of the Ge (I) 422.66 nm line is shown to …
PUBLISHING GROUP
The recent evolution of semiconductor nano-devices, including nanoresonators and
metasurfaces, has provided active tunability of optical functionality by efficiently utilizing …
metasurfaces, has provided active tunability of optical functionality by efficiently utilizing …