Two-dimensional semiconductors for transistors
In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue
to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited …
to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited …
Electronics based on two-dimensional materials
The compelling demand for higher performance and lower power consumption in electronic
systems is the main driving force of the electronics industry's quest for devices and/or …
systems is the main driving force of the electronics industry's quest for devices and/or …
Considerations for ultimate CMOS scaling
KJ Kuhn - IEEE transactions on Electron Devices, 2012 - ieeexplore.ieee.org
This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
A III–V nanowire channel on silicon for high-performance vertical transistors
K Tomioka, M Yoshimura, T Fukui - Nature, 2012 - nature.com
Silicon transistors are expected to have new gate architectures, channel materials and
switching mechanisms in ten years' time,,,. The trend in transistor scaling has already led to …
switching mechanisms in ten years' time,,,. The trend in transistor scaling has already led to …
van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides
L Ma, Y Wang, Y Liu - Chemical Reviews, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …
promising candidates for next-generation electronics owing to their atomically thin structures …
III–V compound semiconductor transistors—from planar to nanowire structures
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …
device roadmap to further improve future performance increases of integrated circuits is …
Energy-efficient tunneling field-effect transistors for low-power device applications: challenges and opportunities
Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
The role of 2-Dimensional materials for electronic devices
Dimensional materials play a vital role in science, engineering, and provide applications in
areas like electronics displays, wearable devices, the internet of things, transport, space …
areas like electronics displays, wearable devices, the internet of things, transport, space …
BSIM—SPICE models enable FinFET and UTB IC designs
Two turn-key surface potential-based compact models are developed to simulate multigate
transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is …
transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is …
InGaAs gate-all-around nanowire devices on 300mm Si substrates
N Waldron, C Merckling, L Teugels… - IEEE Electron …, 2014 - ieeexplore.ieee.org
In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated
on 300mm Si substrates. For an LG of 60 nm an extrinsic gm of 1030 μS/μm at V ds= 0.5 V is …
on 300mm Si substrates. For an LG of 60 nm an extrinsic gm of 1030 μS/μm at V ds= 0.5 V is …