I? rst heard of k· p in a course on semiconductor physics taught by my thesis adviser William
Paul at Harvard in the fall of 1956. He presented the k· p Hamiltonian as a semiempirical …

ZnS nanowaveguides with rectangular cross-section (∼ 50× 50 nm2) and tens of microns in
length have been synthesized by pulsed laser vaporization of ZnS/10% Au targets in a flow …

We derive a nonsymmetrized eight-band effective-mass Hamiltonian for quantum dot
heterostructures (QDH's) in Burt's envelope-function representation. The 8× 8 radial …

The direct bandgap found in hexagonal germanium and some of its alloys with silicon allows
for an optically active material within the group-IV semiconductor family with various …

A microscopic model, based on a full-Brillouin-zone description of the electronic structure, is
used to investigate Auger transitions in InGaN/GaN quantum wells. The lack of momentum …

The main objective of Part I is to give an overview of some of the methods that have been
implemented into the nextnano {sup 3} software. Examples are discussed that give insight …

To make complementary GaN electronics a desirable technology, it is essential to
understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work …

Metal-semiconductor nanostructures represent an important new class of materials
employed in designing advanced optoelectronic and nanophotonic devices, such as …

We present the theoretical basis of wavefunction engineering. We show that a Lagrangian
formulation for the valence bands of bulk semiconductors in the model provides a direct …

We present a derivation of the 6× 6 valence band Hamiltonian valid for general [h 0 il]
oriented III-V wurtzite strained substrates. The derivation is performed within the exact …