Perspectives on metal induced crystallization of a-Si and a-Ge thin films
In recent times, the metal induced crystallization (MIC) process in amorphous
semiconductors (a-Si and a-Ge) has been extensively investigated by many researchers …
semiconductors (a-Si and a-Ge) has been extensively investigated by many researchers …
Formation techniques for upper active channel in monolithic 3D integration: an overview
AHT Nguyen, MC Nguyen, AD Nguyen, SJ Jeon… - Nano …, 2024 - Springer
The concept of three-dimensional stacking of device layers has attracted significant attention
with the increasing difficulty in scaling down devices. Monolithic 3D (M3D) integration …
with the increasing difficulty in scaling down devices. Monolithic 3D (M3D) integration …
Influence of fractal and multifractal morphology on the wettability and reflectivity of crystalline-Si thin film surfaces as photon absorber layers for solar cell
Crystalline Si films incorporated with Al are important for applications in microelectronics
and solar cells. In this paper, we report on the morphology of crystalline Si surfaces in …
and solar cells. In this paper, we report on the morphology of crystalline Si surfaces in …
Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness
The effect of the aluminum layer on the kinetics and mechanism of aluminum-induced
crystallization (AIC) of amorphous silicon (a-Si) in (Al/a-Si) n multilayered films was studied …
crystallization (AIC) of amorphous silicon (a-Si) in (Al/a-Si) n multilayered films was studied …
Fractal formalism in crystallized-Ge via Al induced crystallization under ion irradiation
The fractal characterization of polycrystalline-Ge formed via Al induced crystallization under
ion irradiation is presented. The polycrystalline (p-) Al (50 nm)/amorphous (a-) Ge (50 nm) is …
ion irradiation is presented. The polycrystalline (p-) Al (50 nm)/amorphous (a-) Ge (50 nm) is …
Room temperature fabrication of poly-crystalline Si thin films via Al-induced crystallization under 500 keV Xe+ ion irradiation
Poly-crystalline Si film is an important material for its applications in microelectronics and
solar cells. In order to realize poly-crystalline Si for practical application with high …
solar cells. In order to realize poly-crystalline Si for practical application with high …
Electric-field-enhanced aluminum-induced crystallization of amorphous silicon thin film using decreasing stepwise current method
Electric-field-enhanced aluminum-induced crystallization (AIC) was applied to the
crystallization of amorphous Si (a-Si) using a stepwise current method with two to four …
crystallization of amorphous Si (a-Si) using a stepwise current method with two to four …
Micro‐morphological investigations on wettability of Al‐incorporated c‐Si thin films using statistical surface roughness parameters
The tunable surface properties of Al‐incorporated c‐Si and/or homogeneous c‐Si (ie,
absorber layer) thin films are investigated with the help of 3D surface topography, statistical …
absorber layer) thin films are investigated with the help of 3D surface topography, statistical …
Growth of low resistive nickel mono-silicide phase under low energy Si ion irradiation at room temperature
Nickel mono-silicide (NiSi) is considered as a promising material for developing low
resistance contacts in complementary metal-oxide-semiconductor technology. In the present …
resistance contacts in complementary metal-oxide-semiconductor technology. In the present …
Influence of current density on constant current electric field enhanced aluminum induced crystallization of amorphous silicon thin films
In this study, electric field-enhanced aluminum-induced crystallization (AIC) of amorphous
silicon (a-Si) thin films was investigated considering various current densities. Constant …
silicon (a-Si) thin films was investigated considering various current densities. Constant …