Group III-nitride based hetero and quantum structures
B Monemar, G Pozina - Progress in Quantum Electronics, 2000 - Elsevier
The present paper attempts an overview of a presently very active research field: the III-
nitrides and their interesting possibilities for a range of device applications employing …
nitrides and their interesting possibilities for a range of device applications employing …
Enhanced Pockels effect in AlN microring resonator modulators based on AlGaN/AlN multiple quantum wells
AlN-on-sapphire is a promising integrated photonic platform for operation over a wide
wavelength range from ultraviolet to infrared. However, this platform suffers from a weak …
wavelength range from ultraviolet to infrared. However, this platform suffers from a weak …
Interface- and Temperature-Sensitive Linear Electric Field Effects on Exciton Absorption of CH3NH3PbI3 Perovskite Films
The influence of applied electric field (FA) on the absorption spectra of a methylammonium
lead tri-iodide (MAPbI3) crystalline film sandwiched between a fluorine-doped tin oxide …
lead tri-iodide (MAPbI3) crystalline film sandwiched between a fluorine-doped tin oxide …
Design, fabrication, and optical characteristics of freestanding GaN waveguides on silicon substrate
Freestanding GaN waveguides were fabricated on a silicon substrate by a combination of Cl
2 plasma reactive ion etching and XeF 2 gas selective etching. The freestanding GaN …
2 plasma reactive ion etching and XeF 2 gas selective etching. The freestanding GaN …
[图书][B] Laser Cooling: Fundamental Properties and Applications
G Nemova - 2016 - taylorfrancis.com
In the recent decades, laser cooling or optical refrigeration—a physical process by which a
system loses its thermal energy as a result of interaction with laser light—has garnered a …
system loses its thermal energy as a result of interaction with laser light—has garnered a …
Piezoelectric, electro-optical, and photoelastic effects in multiple quantum wells
We present microphotoluminescence (PL) and micro-Raman measurements with varying
the applied electric field in In x Ga 1− x N/GaN multiple quantum wells (MQWs). The InGaN A …
the applied electric field in In x Ga 1− x N/GaN multiple quantum wells (MQWs). The InGaN A …
Highly linear and efficient phase modulators based on GaInAsP-InP three-step quantum wells
H Mohseni, H An, ZA Shellenbarger… - Applied Physics …, 2005 - pubs.aip.org
Highly linear and efficient phase modulators based on three-step quantum wells are
reported. The spatial separation of electron and hole wave functions in the three-step …
reported. The spatial separation of electron and hole wave functions in the three-step …
Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells
TY Lin - Applied physics letters, 2003 - pubs.aip.org
We present microphotoluminescence and microRaman measurements with different optical
excitation intensities in InGaN/GaN multiple quantum wells (MQWs). When the optical …
excitation intensities in InGaN/GaN multiple quantum wells (MQWs). When the optical …
Thermal effect induced dynamically lasing mode tuning in GaN whispering gallery microcavities
Thermal modulated real-time wavelength tuning of semiconductors has shown great
potential for GaN-based sensors or photo-electricity modulators. Herein, we study the …
potential for GaN-based sensors or photo-electricity modulators. Herein, we study the …
Intersubband all-optical switching based on Coulomb-induced optical nonlinearities in GaN/AlGaN coupled quantum wells
Y Li, R Paiella - Semiconductor science and technology, 2006 - iopscience.iop.org
Intersubband (ISB) transitions in wide-conduction-band-offset GaN/AlGaN quantum wells
are promising for all-optical switching applications in fibre-optic networking, due to their …
are promising for all-optical switching applications in fibre-optic networking, due to their …