Optical modification of 2D materials: Methods and applications

STM Akkanen, HA Fernandez, Z Sun - Advanced Materials, 2022 - Wiley Online Library
Abstract 2D materials are under extensive research due to their remarkable properties
suitable for various optoelectronic, photonic, and biological applications, yet their …

Sustaining the future: semiconductor materials and their recovery

A Kumar, A Thorbole, RK Gupta - Materials Science in Semiconductor …, 2025 - Elsevier
The recent advances in artificial intelligence point to a dramatic acceleration in the pace of
technological evolution. In their never-ending quest to push the boundaries of what is now …

Two-dimensional ferroelectric MoS 2/Ga 2 O 3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties

H Chen, J Zhao, X Wang, X Chen, Z Zhang, M Hua - Nanoscale, 2022 - pubs.rsc.org
Two-dimensional van der Waals heterostructures with strong intrinsic ferroelectrics are
highly promising for novel devices with designed electronic properties. The polarization …

The roadmap of 2D materials and devices toward chips

A Liu, X Zhang, Z Liu, Y Li, X Peng, X Li, Y Qin, C Hu… - Nano-Micro Letters, 2024 - Springer
Due to the constraints imposed by physical effects and performance degradation, silicon-
based chip technology is facing certain limitations in sustaining the advancement of Moore's …

2D Dual Gate Field‐Effect Transistor Enabled Versatile Functions

Y Pang, Y Zhou, L Tong, J Xu - Small, 2024 - Wiley Online Library
Advanced computing technologies such as distributed computing and the Internet of Things
require highly integrated and multifunctional electronic devices. Beyond the Si technology …

Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

C Wang, X Xu, S Tyagi, PC Rout… - Advanced …, 2023 - Wiley Online Library
Gate controllability is a key factor that determines the performance of GaN high electron
mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct …

Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure

JY Yang, MJ Yeom, J Lee, K Lee, C Park… - Advanced Electronic …, 2022 - Wiley Online Library
The wireless communication and power transmission environment varies widely depending
on time and place, and thus reconfigurable devices and circuits are in high demand due to …

Physisorption of propane and butane vapors on novel Kagome antimonene sheets–a first-principles perception

R Bhuvaneswari, V Nagarajan… - Chemical Physics Letters, 2020 - Elsevier
The detecting ability of Kagome-antimonene nanosheet (Kagome-SbNS) with respect to the
two hydrocarbons–Propane and Butane, which are a part of Liquefied Petroleum Gas (LPG) …

Feld-induced modulation of two-dimensional electron gas at LaAlO3/SrTiO3 interface by polar distortion of LaAlO3

J Seo, H Lee, K Eom, J Byun, T Min, J Lee… - Nature …, 2024 - nature.com
Since the discovery of two-dimensional electron gas at the LaAlO3/SrTiO3 interface, its
intriguing physical properties have garnered significant interests for device applications. Yet …

[HTML][HTML] Recent advances in memristors based on two-dimensional ferroelectric materials

W Niu, G Ding, Z Jia, XQ Ma, JY Zhao, K Zhou… - Frontiers of …, 2024 - Springer
In this big data era, the explosive growth of information puts ultra-high demands on the data
storage/computing, such as high computing power, low energy consumption, and excellent …