Excitons and emergent quantum phenomena in stacked 2D semiconductors

NP Wilson, W Yao, J Shan, X Xu - Nature, 2021 - nature.com
The design and control of material interfaces is a foundational approach to realize
technologically useful effects and engineer material properties. This is especially true for two …

Photodetectors based on two‐dimensional layered materials beyond graphene

C Xie, C Mak, X Tao, F Yan - Advanced Functional Materials, 2017 - Wiley Online Library
Following a significant number of graphene studies, other two‐dimensional (2D) layered
materials have attracted more and more interest for their unique structures and distinct …

Programming correlated magnetic states with gate-controlled moiré geometry

E Anderson, FR Fan, J Cai, W Holtzmann, T Taniguchi… - Science, 2023 - science.org
The ability to control the underlying lattice geometry of a system may enable transitions
between emergent quantum ground states. We report in situ gate switching between …

Two-dimensional halide perovskite nanomaterials and heterostructures

E Shi, Y Gao, BP Finkenauer, AH Coffey… - Chemical Society …, 2018 - pubs.rsc.org
Over the last several years, there has been tremendous progress in the development of
nanoscale halide perovskite materials and devices that possess a wide range of band gaps …

Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives

M Samadi, N Sarikhani, M Zirak, H Zhang… - Nanoscale …, 2018 - pubs.rsc.org
Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2,
WS2 and WSe2, constitute an important class of materials with a layered crystal structure …

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

YQ Bie, G Grosso, M Heuck, MM Furchi, Y Cao… - Nature …, 2017 - nature.com
One of the current challenges in photonics is developing high-speed, power-efficient, chip-
integrated optical communications devices to address the interconnects bottleneck in high …

Universality of electronic characteristics and photocatalyst applications in the two-dimensional Janus transition metal dichalcogenides

C Xia, W Xiong, J Du, T Wang, Y Peng, J Li - Physical Review B, 2018 - APS
Due to mirror symmetry breaking, two-dimensional Janus transition metal dichalcogenides
MXY (M= Mo, W; X, Y= S, Se, Te) present charming electronic properties. However, there …

Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures

K Zhang, T Zhang, G Cheng, T Li, S Wang, W Wei… - ACS …, 2016 - ACS Publications
We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW)
heterostructures and an interlayer optical transition at∼ 1.55 μm. The photoinduced charge …

Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating

Y Li, KAN Duerloo, K Wauson, EJ Reed - Nature communications, 2016 - nature.com
Dynamic control of conductivity and optical properties via atomic structure changes is of
technological importance in information storage. Energy consumption considerations …

Halide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals

S Li, S Wang, DM Tang, W Zhao, H Xu, L Chu… - Applied Materials …, 2015 - Elsevier
Chemical vapor deposition (CVD) of two-dimensional (2D) tungsten dichalcogenide crystals
requires steady flow of tungsten source in the vapor phase. This often requires high …