Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET
The diffusion of doping concentration in source/drain regions through ion implantation
technique extents to the channel, which decreases the inversion portion of channel and …
technique extents to the channel, which decreases the inversion portion of channel and …
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance
G Gopal, H Garg, H Agrawal… - … Science and Technology, 2022 - iopscience.iop.org
The device behavior of a stacked ferroelectric heterojunction tunnel field effect transistor (Fe-
HTFET) on a buried oxide substrate is investigated in this paper. Si-doped HfO 2 was taken …
HTFET) on a buried oxide substrate is investigated in this paper. Si-doped HfO 2 was taken …
DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: drain and pocket engineering technique
In this article, a Ge‐source is employed in split drain Z‐shaped line TFET structure (SD‐ZHP‐
TFET) and named as Ge‐source SD‐ZHP‐TFET. The presence of split drain increases the …
TFET) and named as Ge‐source SD‐ZHP‐TFET. The presence of split drain increases the …
Physics based analysis of a high-performance dual line tunneling TFET with reduced corner effects
To improve the DC and analog/HF performance, a novel dual line tunneling based TFET
(DLT-ES-TFET) with elevated source and L-shaped pocket is proposed in this manuscript. In …
(DLT-ES-TFET) with elevated source and L-shaped pocket is proposed in this manuscript. In …
Optical performance of split-source z-shaped horizontal-pocket and hetero-stacked tfet-based photosensors
This paper compares the optical performance of a split-source horizontal-pocket Z-shaped
tunnel field-effect transistor (ZHP-TFET) and hetero-stacked TFET (HS-TFET) using a …
tunnel field-effect transistor (ZHP-TFET) and hetero-stacked TFET (HS-TFET) using a …
Effect of drain engineering on DC and RF characteristics in Ge-source SD-ZHP-TFET
In this paper, a Ge-source is employed in split drain Z-shaped line TFET structure (SD-ZHP-
TFET) and named as Ge-source SD-ZHP-TFET. The presence of split drain increases the …
TFET) and named as Ge-source SD-ZHP-TFET. The presence of split drain increases the …
Design and analysis of a double gate SiGe/Si tunnel FET with unique inner-gate engineering
An inner-gate engineered double gate heterostructure tunnel field effect transistor (SiGe/Si-
IGTFET) has been presented. The inner-gate is grown at the center of the Si 0.6 Ge 0.4/Si …
IGTFET) has been presented. The inner-gate is grown at the center of the Si 0.6 Ge 0.4/Si …
Drain Source-Engineered Double-Gate Tunnel FET for Improved Performance
A Kaur, G Saini - Journal of Electronic Materials, 2024 - Springer
The present study proposes an approach to enhance the DC and RF performance
parameters of a double-gate tunnel field-effect transistor (DGTFET). The approach integrates …
parameters of a double-gate tunnel field-effect transistor (DGTFET). The approach integrates …
Improvement of C-shaped pocket TFET with sandwiched drain for ambipolar performance and analog/RF performance
W Xiao, L Wang, Y Peng, Y Ding, Y Ma, F Yang… - Microelectronics …, 2024 - Elsevier
A novel structure of tunneling field effect transistor device (CSP-SD-TFET) is proposed,
which adds a sandwiched drain to the C-shaped pocket TFET (CSP-TFET). This structure …
which adds a sandwiched drain to the C-shaped pocket TFET (CSP-TFET). This structure …
Investigation on RF/analog performance in SiGe pocket n-tunnel FET
In this paper, a SiGe pocket n-TFET is designed and its electrical performance is extracted
using a TCAD simulator. Initially, a comparative study of input characteristics among …
using a TCAD simulator. Initially, a comparative study of input characteristics among …