Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Achieving technologically relevant performance and stability for optoelectronics, energy
conversion, photonics, spintronics and quantum devices requires creating atomically precise …

Solid-state quantum devices use quantum entanglement for various quantum technologies,
such as quantum computation, encryption, communication and sensing. Solid-state …

The technological evolution has been progressing for centuries and will possibly increase at
a higher rate in the 21st century. Currently, in this age of nanotechnology, the discovery of …

As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has
excellent physical properties, such as high carrier mobility, stability, and abundance on …

Abstract Two-dimensional (2D) semiconductors could potentially replace silicon in future
electronic devices. However, the low carrier mobility in 2D semiconductors at room …

The shrinking of transistors has hit a wall of material degradation and the specialized
electronic applications for complex scenarios have raised challenges in heterostructures …

Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Graphene is very popular because of its many fascinating properties, but its lack of an
electronic bandgap has stimulated the search for 2D materials with semiconducting …