(57) ABSTRACT A method of manufacturing a device includes forming a plurality of stacks of
alternating layers on a substrate, constructing a plurality of nanosheets from the plurality of …

(57) ABSTRACT A substrate structure includes a set of nanosheet layers stacked upon a
substrate. The substrate structure includes a p-channel region and an n-channel region. The …

(57) ABSTRACT A method is presented for reducing capacitance coupling. The method
includes forming a nanosheet stack including alternating layers of a first material and a …

Multi-gate semiconductor devices and methods for forming thereof including forming air
gaps between the gate and the adjacent source/drain features. A first fin element including a …

(57) ABSTRACT A semiconductor structure includes a first field-effect tran sistor disposed on
a substrate. The first field-effect transistor includes a stack of nanosheet layers, a first gate …

An integrated circuit includes a base, a first transistor structure on or above the base, and a
second transistor structure on or above the base, where the second transistor structure is …

Implementation of a device with stacked transistors com prising: a first transistor of a first
type, in particular N or P, the first transistor having a channel formed in one or more first semi …

(57) ABSTRACT A semiconductor structure includes a first field-effect tran sistor disposed on
a substrate. The first field-effect transistor includes a first metal gate, and a first source/drain …

Semiconductor devices and methods of forming the same include partially etching sacrificial
layers in a first stack of alternating sacrificial layers and channel layers to form first recesses …

(57) ABSTRACT A method of fabricating a semiconductor device includes forming a first
stack of first transistor structures on a substrate, and forming a second stack of second …