Atomic defects, being the most prevalent zero-dimensional topological defects, are
ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be …

Layered transition metal dichalcogenides (TMDs) are a diverse group of materials whose
properties vary from semiconducting to metallic with a variety of many body phenomena …

Edge states of two-dimensional transition-metal dichalcogenides (TMDCs) are crucial to
quantum circuits and optoelectronics. However, their dynamics are pivotal but remain …

Edges and point defects in layered dichalcogenides are important for tuning their electronic
and magnetic properties. By combining scanning tunneling microscopy (STM) with density …

Mirror twin boundaries (MTBs) observed in MoSe 2 are formed due to incorporation of
excess Mo into the lattice. In contrast, MTBs in WSe 2 have a high formation energy and …

To develop recyclable adsorptive materials for high-efficient separation of cesium (Cs+) from
aqueous salt lake brine is of great significance. Herein, a novel polyimide (PI-18C6) with …

Heterostructure devices based on two-dimensional materials have been under intensive
study due to their intriguing electrical and optical properties. One key factor in understanding …

Nanosheet (NS) vertical‐stacked complementary field‐effect transistors (CFETs), where the
NS n‐FET and NS p‐FET are vertically stacked and controlled using a common gate, would …

Organic conjugated polymers demonstrate great potential in transistors, solar cells and light-
emitting diodes, whose performances are fundamentally governed by charge transport …

Implementing two-dimensional materials in field-effect transistors (FETs) offers the
opportunity to continue the scaling trend in the complementary metal-oxide-semiconductor …