In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs)
fabricated on metal–organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 …

Ga 2 O 3-based heterojunction photodetectors integrate Ga 2 O 3 with partner
semiconductors via deposition techniques to obtain a high-quality interface, resulting in …

Solar‐blind ultraviolet (UV) photodetectors based on p‐organic/n‐Ga2O3 hybrid
heterojunctions have attracted extensive attention recently. Herein, the multifunctional solar …

GaN-based light-emitting diodes (LEDs) have attracted widespread attention owing to their
advantages of high efficiency and brightness, stable emission and full color emission …

Self-powered flexible solar-blind photodetectors based on WSe2/b-Ga2O3 2D/3D van der
Waals (vdW) heterojunctions were manufactured, which exhibit brilliant optoelectronic …

The rising demand for missile warnings, fire alarms, and astronomical imaging applications
makes gallium oxide a promising ultra-wide band gap semiconducting material. Integrating …

Self-powered ultraviolet (UV) photodetectors (PDs) are critical for future energy-efficient
optoelectronic systems due to their low energy consumption and high sensitivity. In this …

The van der Waals (vdW) pn junctions are crucial to develop multifunctional and high-
performance electronic and optoelectronic devices. The asymmetric doping effect in wide …

This work reports on high-performance Schottky barrier diodes (SBDs) fabricated on Ga 2 O
3 epilayers using Cu as Schottky contacts (SCs). The fabricated SBDs exhibited high …

A detailed investigation of deep traps in halide vapor-phase epitaxy (HVPE)-grown β-Ga 2 O
3 epilayers has been done by performing deep-level transient spectroscopy (DLTS) from …