[PDF][PDF] Evolution of low-noise avalanche photodetectors

J Campbell - IEEE Journal of Selected Topics in Quantum …, 2022 - par.nsf.gov
Evolution of Low-Noise Avalanche Photodetectors Page 1 IEEE JOURNAL OF SELECTED
TOPICS IN QUANTUM ELECTRONICS, VOL. 28, NO. 2, MARCH/APRIL 2022 3800911 …

Low-noise high-temperature AlInAsSb/GaSb avalanche photodiodes for 2-μm applications

AH Jones, SD March, SR Bank, JC Campbell - Nature Photonics, 2020 - nature.com
Sensitive photodetectors that operate at a wavelength of 2 μm are required for applications
in sensing and imaging but state-of-the-art devices are severely limited by high dark current …

A review on III–V compound semiconductor short wave infrared avalanche photodiodes

Y Liang, CP Veeramalai, G Lin, X Su, X Zhang… - …, 2022 - iopscience.iop.org
The on-chip avalanche photodiodes (APDs) are crucial component of a fully integrated
photonics system. Specifically, III–V compound APD has become one of the main …

AlInAsSb avalanche photodiodes on InP substrates

SH Kodati, S Lee, B Guo, AH Jones, M Schwartz… - Applied Physics …, 2021 - pubs.aip.org
We report the gain, noise, and dark current characteristics of random alloy Al 0.79 In 0.21 As
0.74 Sb 0.26 (hereafter AlInAsSb)-based avalanche photodiodes (APDs) on InP substrates …

[HTML][HTML] InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stability

B Guo, M Schwartz, SH Kodati, KM McNicholas… - APL Photonics, 2023 - pubs.aip.org
High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a
wide range of applications, including telecommunications, data centers, spectroscopy …

A GaAsSb/AlGaAsSb avalanche photodiode with a very small temperature coefficient of breakdown voltage

Y Cao, T Osman, E Clarke, PK Patil, JS Ng… - Journal of Lightwave …, 2022 - opg.optica.org
Avalanche photodiodes (APDs) made with the material AlGaAsSb (lattice-matched to InP)
exhibit very low excess noise characteristics. We demonstrate a Separate Absorption and …

Temperature dependence of avalanche breakdown of AlGaAsSb and AlInAsSb avalanche photodiodes

B Guo, SZ Ahmed, X Xue, AK Rockwell… - Journal of Lightwave …, 2022 - ieeexplore.ieee.org
Digital alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44, random alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44,
and random alloy Al 0.79 In 0.21 As 0.74 Sb 0.26 are promising candidates for the …

64 Gbps PAM4 Si-Ge waveguide avalanche photodiodes with excellent temperature stability

Y Yuan, Z Huang, B Wang, WV Sorin… - Journal of Lightwave …, 2020 - opg.optica.org
A Si-Ge waveguide avalanche photodiode with extremely high temperature stability is
demonstrated. The breakdown voltage increases∼ 4.2 mV/° C, bandwidth reduces∼ …

Sb-based low-noise avalanche photodiodes

JC Campbell, JPR David, SR Bank - Photonics, 2023 - mdpi.com
Accurate detection of weak optical signals is a key function for a wide range of applications.
A key performance parameter is the receiver signal-to-noise ratio, which depends on the …

High Gain, Low Dark Current Al0.8In0.2As0.23Sb0.77 Avalanche Photodiodes

AH Jones, AK Rockwell, SD March… - IEEE Photonics …, 2019 - ieeexplore.ieee.org
We report Al 0.8 In 0.2 As 0.23 Sb 0.77 avalanche photodiodes with high gain (M> 1300)
and low dark current at room temperature. Impact ionization coefficients for this material …