Due to their low power consumption, long lifetime and high efficiency, nitrides based white
light-emitting-diodes (LEDs) have long been considered to be a promising technology for …

The design of the active region is one of the most crucial problems to address in light
emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the …

A tapered AlGaN electron blocking layer with step-graded aluminum composition is
analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally …

GaN-based semiconductors are promising materials for solid-state optoelectronic
applications. However, the strong internal electrostatic field (IEF) along the [0001] direction …

To improve the optical and electrical properties of AlGaN-based deep ultraviolet lasers, an
inverse-trapezoidal electron blocking layer is designed. Lasers with three different structural …

We studied the influence of a tapered AlGaN electron blocking layer (EBL) with step-graded
aluminum composition on hole injection and electron overflow effects in InGaN-based laser …

The interface polarization effect of the electron blocking layer (EBL) hinders the hole
transmission efficiency, and the traditional EBL cannot effectively suppress the electron …

Some specific designs on band structure near the active region, including the modifications
of the material and thickness of the electron blocking layer (EBL), in the deep violet InGaN …

We report on the effect of a graded AlGaN electron blocking layer (GEBL) on the emission
properties of InGaN/GaN multiple quantum wells light-emitting diode (LED). The adoption of …

In this work, the advantages of the p-InGaN/AlGaN electron blocking layer (EBL) for
InGaN/GaN light-emitting diodes (LEDs) were studied numerically and experimentally. The …