Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices:...

Enhanced photodetection performance of self-biased γ-In2Se3/p-Si heterojunction photodetectors using argon ion irradiation

Y Hase, P Kolhe, V Doiphode, A Punde… - Journal of Materials …, 2024 - Springer
In this work, γ-In2Se3 thin films were deposited on ap-type Si (p-Si) substrate using RF
magnetron sputtering. The effects of Ar+ ion irradiation on structural, optical, morphological …
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Single-Event Transients in Vertical GaN Diodes with N-Implanted Hybrid Edge Termination

AD Koehler, A Khachatrian, AG Jacobs… - … on Nuclear Science, 2025 - ieeexplore.ieee.org
Vertical gallium nitride (GaN) power devices require effective edge termination for mitigating
peak electric fields to achieve high breakdown voltages. The edge termination region …
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Rejection ratio and responsivity of dual-layer III-nitride alloy photodetectors

Z Allam, C Boudaoud… - Engineering Research …, 2024 - iopscience.iop.org
Abstract The III-Nitride alloys (AlGaN and InGaN) photodetectors with Schottky barriers have
been studied, focusing on two structures with active layers: one based on Al 0.25 Ga 0.75 …
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