Noise and linearity analysis of recessed-source/drain junctionless Gate All Around (Re-S/D-JL-GAA) MOSFETs for communication systems
Noise becomes a critical performance for any electronic component when it is being used for
communication systems, it makes MOSFETs less effective at performing their functions in a …
communication systems, it makes MOSFETs less effective at performing their functions in a …
Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi
Abstract Herein we investigate a (001)-oriented GaAs1− x Bi x/GaAs structure possessing Bi
surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth …
surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth …
Influence of Bi and N contents and dot radius on optoelectronic and diamagnetic properties of GaNAsBi strained quantum dot excitons
The ground state, the fundamental transition, and the binding energies of heavy hole and
light hole excitons confined in GaNAsBi/GaAs strained spherical quantum dots (QDs) are …
light hole excitons confined in GaNAsBi/GaAs strained spherical quantum dots (QDs) are …
Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1− xBix explored by atom probe tomography and HAADF-STEM
The effects of a 45 min anneal at 800 C on the physical properties and microstructure of a
five-period GaAs 1− x Bi x/GaAs 1− y Bi y superlattice with y≠ x were studied using room …
five-period GaAs 1− x Bi x/GaAs 1− y Bi y superlattice with y≠ x were studied using room …
Magnetothermal properties of two-dimensional electron gas in matched AlGaAs/GaABiN structure
M Mbarki, N Ajnef, A Rebey - Applied Physics A, 2024 - Springer
The band anticrossing (BAC) model has been theoretically used to explore the electronic
band structure of AlGaAs/GaAsBiN. Particularly, we have quantified the effective mass and …
band structure of AlGaAs/GaAsBiN. Particularly, we have quantified the effective mass and …
Growth and characterization of InAs/InAsSb superlattices by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors
ZD Ning, SM Liu, S Luo, F Ren, F Wang, T Yang… - Materials Letters, 2016 - Elsevier
InAs/InAsSb superlattices were grown on (001) GaSb substrates by metal organic chemical
vapor deposition for potential applications as mid-infrared optoelectronic devices. Atomic …
vapor deposition for potential applications as mid-infrared optoelectronic devices. Atomic …
Electron mobility calculation of diluted III–V-nitrides alloys
K Chakir, C Bilel, A Rebey - Semiconductors, 2019 - Springer
A 10-band kp model has been adopted to study the electronic transport properties of dilute III–
V-nitride alloys. The N incorporation into III–V material causes a significant band gap …
V-nitride alloys. The N incorporation into III–V material causes a significant band gap …
Dependence of heavy hole exciton binding energy and the strain distribution in GaAs1− xBix/GaAs finite spherical quantum dots on Bi content in the material
The ground state binding energy of heavy hole excitons confined in GaAs 1− x Bi x/GaAs
spherical quantum dots is calculated as a function of dot radius and the Bi content using a …
spherical quantum dots is calculated as a function of dot radius and the Bi content using a …
Bismuth-related nanostructures
L Wang, H Liang, Z Shen, S Wang - Bismuth-Containing Alloys and …, 2019 - Springer
Bismuth can modify surface reconstruction of III-V semiconductors and affect their growth
conditions. Bismuth incorporation into III-Vs strongly changes their electronic properties. We …
conditions. Bismuth incorporation into III-Vs strongly changes their electronic properties. We …