With the continued miniaturization of devices in the semiconductor industry, atomic layer
deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the …

An integrated circuit device includes a fin at least partially embedded in a shallow trench
isolation (STI) region and extending between a source and a drain. The fin is formed from a …

Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main
key for continuous progress in silicon-based semiconductor industry over the past three …

Unprecedented growth in CMOS technology and demand of high-density integrated circuits
(ICs) in semiconductor industry has motivated to research community towards the …

One of the major challenges toward Si nanowire (SiNW) based photonic devices is
controlling the electronic band structure of the Si nanowire to obtain a direct band gap. Here …

Axial charge separation in small diameter, partially strained silicon nanowires is predicted
from ab initio calculations with electrons and holes located in different ends of the wires. We …

Raman shifts are investigated on silicon and germanium substrates under the uniaxial
tensile strain on various substrate orientations. The strain splits the triply degenerate optical …

Based on 3D simulations, we report a performance assessment of triple-and double-gate
FinFETs for high performance (HP), low operating power (LOP) and low standby power …

Silicon nanowires (SiNWs) have recently been shown to be promising as high capacity
lithium battery anodes. SiNWs can be grown with their long axis along several different …

We theoretically studied how the electric field effect can modify thermoelectric properties of
intrinsic, n-type and p-type bismuth telluride nanowires with the growth direction [110]. The …