Manganese oxide nanoparticles: an insight into structure, synthesis and applications

P Yadav, A Bhaduri, A Thakur - ChemBioEng Reviews, 2023 - Wiley Online Library
Manganese oxide nanoparticles with different crystal phases, morphologies, and structural
diversity along with their exceptional properties like high specific surface area, a high …

Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn2O3 Gate Interface

N Pal, A Sharma, V Acharya… - ACS Applied …, 2019 - ACS Publications
A solution-processed high-performance subvolt (< 1 V) tin oxide (SnO2) thin film transistor
(TFT) has been fabricated onto an ion-conducting Li–Al2O3 gate dielectric by utilizing a high …

Multiferroicity and magnetoelastic coupling in : A binary perovskite

M Chandra, S Yadav, RJ Choudhary, R Rawat… - Physical Review B, 2018 - APS
Multiferroics, where at least two primary ferroic orders are present and coupled in a single
system, constitute an important class of materials. They have attracted special consideration …

Physio-Chemical Properties and Dielectric Behavior of As-Grown Manganese Oxide (γ-Mn2O3) Nanoparticles

MM Abdullah, SA Siddiqui, SM Al-Abbas - Journal of Electronic Materials, 2020 - Springer
Semiconducting metal oxide nanostructured materials are demonstrating efficient use and
functional properties in devices. Manganese oxide (Mn 2 O 3) is one of the smart …

Electrical properties and energy parameters of photosensitive n-mn2o3/n-cdznte heterostructures

IG Orlets' kyi, MI Ilashchuk, EV Maistruk… - Ukrainian journal of …, 2021 - elibrary.ru
Conditions for the fabrication of isotype photodiode n-Mn 2 O 3 n-CdZnTe heterostructures
by the spray pyrolysis of thin α-Mn 2 O 3 bixbite films on n-CdZnTe crystalline substrates …

“GATE INTERFACE STUDY FOR THE IMPROVEMENT OF IONCONDUCTING DIELECTRIC BASED LOW OPERATING VOLTAGE THIN FILM TRANSISTOR

N Pal - 2022 - idr-lib.iitbhu.ac.in
Thin-film transistors (TFT) serve as the foundation of flat-panel display devices. In order to
achieve great performance while lowering production costs, researchers looked into a …

Електричні властивості і енергетичні параметри фото-чутливих гетероструктур n-Mn2O3/n-CdZnTe

IG Orlets'kyi, MI Ilashchuk, EV Maistruk… - Ukrainian Journal of …, 2021 - ujp.bitp.kiev.ua
Дослiджено умови виготовлення фотодiодних iзотипних гетероструктур 𝑛-Mn2O3/𝑛-
CdZnTe методом спрей-пiролiзу тонких плiвок бiксбiту 𝛼-Mn2O3 на кристалiчнi …

[PDF][PDF] НАПIВПРОВIДНИКИ I ДIЕЛЕКТРИКИ

Е ВЛАСТИВОСТI, IЕП ФОТОЧУТЛИВИХ - jnas.nbuv.gov.ua
Дослiджено умови виготовлення фотодiодних iзотипних гетероструктур 𝑛-Mn2O3/𝑛-
CdZnTe методом спрей-пiролiзу тонких плiвок бiксбiту 𝛼-Mn2O3 на кристалiчнi …

[PDF][PDF] SEMICONDUCTORS AND DIELECTRICS

EPOF PHOTOSENSITIVE - ujp.bitp.kiev.ua
Conditions for the fabrication of isotype photodiode 𝑛-Mn2O3𝑛-CdZnTe heterostructures by
the spray pyrolysis of thin 𝛼-Mn2O3 bixbite films on 𝑛-CdZnTe crystalline substrates have …